INA217AIDWR ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017features differential input, low noise,• Differential Receiversand low distortion that provides sup ..
INA217AIDWT ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017features wide supply voltage,excellent output voltage swing, and high outputcurrent drive, making i ..
INA217AIDWT ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017Maximum Ratings.. 510.2 Layout Example....... 156.2 ESD Ratings ...... 511 Device and Documentation ..
INA217AIP ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017Features... 18 Application and Implementation...... 132 Applications..... 18.1 Application Informat ..
INA217AIP ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017Simplified SchematicV+7INA2172V – 6kΩ 6kΩINA11RG15kΩ6A3VOUT5kΩ10kΩG = 1 +R8 GRG 6kΩ 6kΩ2A23V +IN4 5 ..
INA219AIDCNR ,26-V, Bidirectional, Zero-Drift, High-Side, I2C Out Current/Power Monitor 8-SOT-23 -40 to 125features 16programmable addresses.• SOT23-8 and SOIC-8 PackagesThe INA219 is available in two grade ..
IRFR3911 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 0.115Ω 14ABenefits Low Gate ..
IRFR410 ,1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 1.5A, 500VThese are N-Channel enhancement mode silicon gate = 7.000Ω•rDS(ON)power ..
IRFR4104 ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR4104 IRFU4104Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-PAK is designed for surface mounting usingvapor phase, infrared, or wave solder ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR4105TR ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91302CIRFR/U4105®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR4105)V = 55 ..
INA217-INA217AIDWR-INA217AIDWT-INA217AIP
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
INA217SBOS247C –JUNE 2002–REVISED NOVEMBER 2015
INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 Features 3 DescriptionThe INA217 deviceisa low-noise, low-distortion, Low Noise: 1.3 nV/M √Hzat1 kHz monolithic instrumentation amplifier. Current-• Low THD+N: 0.004%at1 kHz,G= 100 feedback circuitry allows the INA217 device to• Wide Bandwidth: 800 kHzatG= 100 achieve wide bandwidth and excellent dynamic
response overa wide rangeof gain. The INA217• Wide Supply Range: ±4.5Vto ±18V deviceis ideal for low-level audio signals such as• High CMR:> 100 dB balanced low-impedance microphones. Many• Gain Set With External Resistor industrial, instrumentation, and medical applications
also benefit fromits low noise and wide bandwidth.• DIP-8 and SOL-16 Widebody Packages
Unique distortion cancellation circuitry reduces
2 Applications distortionto extremely low levels, evenin high gain.
The INA217 device provides near-theoretical noise• Professional Microphone Preamps
performance for 200-Ω source impedance. The• Moving-coil Transducer Amplifiers INA217 device features differential input, low noise,• Differential Receivers and low distortion that provides superior performance Bridge Transducer Amplifiers in professional microphone amplifier applications.
The INA217device features wide supply voltage,
excellent output voltage swing, and high output
current drive, makingit an optimal candidate for use high-level audio stages.
The INA217 deviceis availablein the same DIP-8
and SOL-16 wide body packages and pinouts as the
SSM2017. Fora smaller package, see the INA163
device in SO-14 narrow. The INA217 device is
specified over the temperature range of –40°Cto
85°C.
Device Information(1)(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.