INA214AIDCKR ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Maximum Ratings table....... 6• Changed HBM ESD value (Version A) from 4000 to 2000 V in ESD Rating ..
INA214AIDCKT ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Electrical Characteristics table...... 6• Changed Figure 2 to reflect operating temperature range 1 ..
INA214AIRSWR ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125Maximum Ratings table ....... 6• Changed ESD Ratings table: changed title, changed format to curren ..
INA214AIRSWT ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125Features 3 DescriptionThe INA21x are voltage-output, current-shunt1• Wide Common-Mode Range: –0.3 V ..
INA217 ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017Features 3 DescriptionThe INA217 device is a low-noise, low-distortion,1• Low Noise: 1.3 nV/M√Hz at ..
INA217AIDWR ,Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017features differential input, low noise,• Differential Receiversand low distortion that provides sup ..
IRFR3806TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETUninterruptibl ..
IRFR3910 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91364BIRFR/U3910®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR3910)V = 10 ..
IRFR3910PBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-PAK is designed for surface mounting using D-PAK I-PAKvapor phase, infrared ..
IRFR3910TR ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3910TRL ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3910TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Wuan-eDem.
Absolute Maximum Ratings
Param eter Max. Units
ID tp To = 25''C Cont ..
INA214AIDCKR-INA214AIDCKT-INA214AIRSWR-INA214AIRSWT
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125
INA21xOUT
IN+
REF
Reference
Voltage
Supply LoadRSHUNT
Output R3 R4
PRODUCT 4
GAINSC70
(Enables Shunt Dropsof 10-mV Full-Scale) Accuracy: Gain Error (Maximum Over Temperature): ±0.5% (VersionC) ±1% (VersionsA andB) 0.5-µV/°C Offset Drift (Maximum) 10-ppm/°C Gain Drift (Maximum) Choiceof Gains: INA210: 200 V/V INA211: 500 V/V INA212: 1000 V/V INA213:50 V/V INA214: 100 V/V INA215:75 V/V Quiescent Current: 100 μA (Maximum) SC70 and Thin UQFN Packages:All Models
Applications Notebook Computers Cell Phones Telecom Equipment Power Management Battery Chargers
precision-current measurement for system
optimization,orin closed-loop feedback circuits. This
seriesof devices can sense drops across shuntsat
common-mode voltages from –0.3
independentof the supply voltage.
available:50 V/V,75 V/V, 100 V/V, 1000 V/V. The low offset
architecture enables current sensing
drops across the shuntas lowas 10-mV
These devices operate froma single
power supply, drawinga maximum
supply current. All versions are
extended operating temperature
(–40°Cto +125°C), and offeredin
packages.
Device Information(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Simplified Schematic
