INA210AIDCKR ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Features 3 DescriptionThe INA21x are voltage-output, current-shunt1• Wide Common-Mode Range: –0.3 V ..
INA210AIDCKRG4 , Voltage Output, High or Low Side Measurement, Bi-Directional Zero-Drift Series CURRENT SHUNT MONITOR
INA210AIRSWR ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125Maximum Ratings table ....... 6• Changed ESD Ratings table: changed title, changed format to curren ..
INA211AIDCKR ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Electrical Characteristics table...... 6• Changed Figure 2 to reflect operating temperature range 1 ..
INA211AIDCKT ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Maximum Ratings table ....... 6• Changed ESD Ratings table: changed title, changed format to curren ..
INA211AIDCKT ,26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125Features 3 DescriptionThe INA21x are voltage-output, current-shunt1• Wide Common-Mode Range: –0.3 V ..
IRFR3504ZTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
IRFR3505 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3505TRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3518 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D 80V 29m 30ABenefits Low Gate ..
IRFR3518TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D Lead-Free 80V 29m 30ABenefit ..
IRFR3607 ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3607PbFIRFU3607PbF
INA210AIDCKR-INA210AIRSWR
Voltage Output, High/Low-Side Measurement, Bi-Directional Zero-Drift Series Current Shunt Monitor
INA21xOUT
IN+
REF
Reference
Voltage
Supply LoadRSHUNT
Output R3 R4
PRODUCT 4
GAINSC70
(Enables Shunt Dropsof 10-mV Full-Scale) Accuracy: Gain Error (Maximum Over Temperature): ±0.5% (VersionC) ±1% (VersionsA andB) 0.5-µV/°C Offset Drift (Maximum) 10-ppm/°C Gain Drift (Maximum) Choiceof Gains: INA210: 200 V/V INA211: 500 V/V INA212: 1000 V/V INA213:50 V/V INA214: 100 V/V INA215:75 V/V Quiescent Current: 100 μA (Maximum) SC70 and Thin UQFN Packages:All Models
Applications Notebook Computers Cell Phones Telecom Equipment Power Management Battery Chargers
precision-current measurement for system
optimization,orin closed-loop feedback circuits. This
seriesof devices can sense drops across shuntsat
common-mode voltages from –0.3
independentof the supply voltage.
available:50 V/V,75 V/V, 100 V/V, 1000 V/V. The low offset
architecture enables current sensing
drops across the shuntas lowas 10-mV
These devices operate froma single
power supply, drawinga maximum
supply current. All versions are
extended operating temperature
(–40°Cto +125°C), and offeredin
packages.
Device Information(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Simplified Schematic
