INA199A1DCKR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 6-SC70 -40 to 125Features 3 DescriptionThe INA199 series of voltage-output, current-shunt1• Wide Common-Mode Range: ..
INA199A1RSWR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 10-UQFN -40 to 125Electrical Characteristics table 7• Updated Figure 3.. 8• Updated Figure 9.. 9• Updated Figure 12 9 ..
INA199A2DCKR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 6-SC70 -40 to 125Features... 19 Application and Implementation...... 192 Applications..... 19.1 Application Informat ..
INA199A2RSWR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 10-UQFN -40 to 125Maximum Ratings table........ 5• Changed INA199Ax HBM value from ±4000 to ±2000 and changed INA199B ..
INA199A3DCKR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 6-SC70 -40 to 125Electrical Characteristics table ..... 7JAChanges from Revision D (November 2012) to Revision E Pag ..
INA199A3RSWR ,26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 10-UQFN -40 to 125Electrical Characteristics table... 7• Changed 105°C to 125°C in last paragraph of Overview section ..
IRFR320BTM ,400V N-Channel B-FET / Substitute of IRFR320 & IRFR320AFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR320TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.598A
1:212 Rectifier IRFR320
HEXFET® Power MOSFET |RFU320
q Dynamic dv/dt ..
IRFR320TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFR320TRPBF , Power MOSFET
INA199A1DCKR-INA199A1RSWR-INA199A2DCKR-INA199A2RSWR-INA199A3DCKR-INA199A3RSWR
26-V, Bi-Directional, Zero-Drift, Low- or High-Side, Voltage Output Current Shunt Monitor 10-UQFN -40 to 125
OUT
GND IN-
IN+FmFm
REF
Reference R3
Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design Offset Voltage: ±150 μV (Maximum)
(Enables Shunt Dropsof 10-mV Full-Scale) Accuracy: Gain Error (Maximum Over Temperature): ±1%(C Version) ±1.5%(A andB Versions) 0.5-μV/°C Offset Drift (Maximum) 10-ppm/°C Gain Drift (Maximum) Choiceof Gains: INA199x1:50 V/V INA199x2: 100 V/V INA199x3: 200 V/V Quiescent Current: 100 μA (Maximum) Packages: 6-Pin SC70, 10-Pin UQFN
Applications Notebook Computers Cell Phones Qi-Compliant Wireless Charging Telecom Equipment Power Management Battery Chargers
commonly used for overcurrent protection, precision-
current measurement for system optimization,
closed-loop feedback circuits. This seriesof devices
can sense drops across shunt resistorsat common-
mode voltages from –0.3Vto 26V, independent
the supply voltage. Three fixed gains are available: V/V, 100 V/V, and 200 V/V. The low offsetof
zero-drift architecture enables current sensing
maximum drops across the shunt as low as 10-mV
full-scale.
These devices operate froma single 2.7-Vto
power supply, drawinga maximum of 100 µA
supply current. All versions are specified from –40°C 125°C, and offeredin both SC70-6 and thin UQFN- packages.
Device Information(1)
