INA111APG4 ,High Speed FET-Input Instrumentation Amplifier 8-PDIP FEATURES DESCRIPTIONl FET INPUT: I = 20pA max The INA111 is a high speed, FET-input instrumenta-Bti ..
INA111AU ,High Speed FET-Input INSTRUMENTATION AMPLIFIERFEATURES DESCRIPTIONl FET INPUT: I = 20pA max The INA111 is a high speed, FET-input instrumenta-Bti ..
INA111BP ,High Speed FET-Input INSTRUMENTATION AMPLIFIERINA111INA111®INA111High Speed FET-InputINSTRUMENTATION AMPLIFIER
INA111BU ,High Speed FET-Input INSTRUMENTATION AMPLIFIERINA111INA111®INA111High Speed FET-InputINSTRUMENTATION AMPLIFIER
INA114AP ,Precision INSTRUMENTATION AMPLIFIERINA114INA114®INA114PrecisionINSTRUMENTATION AMPLIFIERDESCRIPTION
INA114APG4 ,Precision Instrumentation Amplifier 8-PDIP INA114INA114®INA114PrecisionINSTRUMENTATION AMPLIFIERDESCRIPTION
IRFP22N60K ,600V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplicationsV R typ. IDSS DS(on) D Hard Switching Primary or PFS Switch600V 240mΩ 22A Switch Mode ..
IRFP22N60KPBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageIRFP22N60KSMPS MOSFETHEXFET Power MOSFET
IRFP23N50L ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplications• #$Trr typ.V R typ. IDSS DS(on) D• % $ • ..
IRFP23N50LPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageFeatures and Benefits• • ..
IRFP240 ,20A, 200V, 0.180 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 20A, 200VThis N-Channel enhancement mode silicon gate power field = 0.180Ω•rDS(ON) e ..
IRFP240PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational PD-9.444C
TOR Rectifier IRFP240
HEXFETOD Power MOSFET
q Dynamic dv/dt Rating
..
INA111AP-INA111APG4-INA111AU-INA111BP-INA111BU
High Speed FET-Input Instrumentation Amplifier 8-PDIP
INA111 INA111 ® INA111 High Speed FET-Input INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION lFET INPUT: I = 20pA max The INA111 is a high speed, FET-input instrumenta- B tion amplifier offering excellent performance. lHIGH SPEED: T = 4μs (G = 100, 0.01%) S The INA111 uses a current-feedback topology provid-lLOW OFFSET VOLTAGE: 500μV max ing extended bandwidth (2MHz at G = 10) and fast lLOW OFFSET VOLTAGE DRIFT: settling time (4μs to 0.01% at G = 100). A single 5μV/°C max external resistor sets any gain from 1 to over 1000. lHIGH COMMON-MODE REJECTION: Offset voltage and drift are laser trimmed for excellent 106dB min DC accuracy. The INA111’s FET inputs reduce input l8-PIN PLASTIC DIP, SOL-16 SOIC bias current to under 20pA, simplifying input filtering and limiting circuitry. The INA111 is available in 8-pin plastic DIP, and APPLICATIONS SOL-16 surface-mount packages, specified for the –40°C to +85°C temperature range.lMEDICAL INSTRUMENTATION lDATA ACQUISITION V+ 7 (13) INA111 – 2 V IN Feedback (4) A 1 (12) 10kΩ 10kΩ DIP Connected 1 Internally 25kΩ (2) 6 A V R G 3 O (11) 8 50kΩ 25kΩ G = 1 + R (15) G 5 A Ref 2 + 3 (10) 10kΩ 10kΩ V IN (5) 4 (7) DIP (SOIC) V– International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ® © 1992 Burr-Brown Corporation PDS-1143E Printed in U.S.A. March, 1998 1 INA111 SBOS015
