IN4728A ,One Watt Zeners1N4728A - 1N4752A Series1N4728A - 1N4752A Series One Watt ZenersTolerance: A = 5%Absolute Maximum R ..
IN4729A , Zeners
IN4729A , Zeners
IN4730A , Zeners
IN4730A , Zeners
IN4731A , Zeners
IRFI840GLC ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The TO-220 Fullpak eliminates the need for additional insulating hardware.
The ..
IRFI840GLCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageI ntemational PD-9.1208
ISER Rectifier IRFI840GLC
HEXFE1® Power MOSFET I,
. Ultra Low Gate C ..
IRFI9520G ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI9530GPBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI9540G ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI9540N ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
IN4728A
One Watt Zeners
1N4728A - 1N4752A Series 1N4728A - 1N4752A Series One Watt Zeners Tolerance: A = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Param eter Value Units S torage Tem perature R ange -65 to +200 °C M axim um Junction O perating Tem perature + 200 °C Lead Tem perature (1/16” from case for 10 seconds) + 230 °C Total D evice D issipation 1.0 W 6.67 D erate above 50 °C mW /°C Therm al resistance Junction to Lead 53.5 °C/W Therm al resistance Junction to A m bient 100 °C/W Surge Power** 10 W *These ratings are limiting values above which the serviceability of the diode may be impaired. DO-41 **Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA = 25°C unless otherwise noted V Z I Z I V I I I Z Z ZT ZK ZK R R SURGE ZM @ @ @ Device (V) (Ω) (mA) (Ω) (mA) (V) (μA) (mA) (mA) 1N4728A 3.3 10 76 400 1.0 1.0 100 1,380 276 1N4729A 3.6 10 69 400 1.0 1.0 100 1,260 252 1N4730A 3.9 9.0 64 400 1.0 1.0 50 1,190 234 1N4731A 4.3 9.0 58 400 1.0 1.0 10 1,070 217 1N4732A 4.7 8.0 53 500 1.0 1.0 10 970 193 1N4733A 5.1 7.0 49 550 1.0 1.0 10 890 178 1N4734A 5.6 5.0 45 600 1.0 2.0 10 810 162 1N4735A 6.2 2.0 41 700 1.0 3.0 10 730 146 1N4736A 6.8 3.5 37 700 1.0 4.0 10 660 133 1N4737A 7.5 4.0 34 700 0.5 5.0 10 605 121 1N4738A 8.2 4.5 31 700 0.5 6.0 10 550 110 1N4739A 9.1 5.0 28 700 0.5 7.0 10 500 100 1N4740A 10 7.0 25 700 0.25 7.6 10 454 91 1N4741A 11 8.0 23 700 0.25 8.4 5.0 414 83 1N4742A 12 9.0 21 700 0.25 9.1 5.0 380 76 1N4743A 13 10 19 700 0.25 9.9 5.0 344 69 1N4744A 15 14 17 700 0.25 11.4 5.0 304 61 1N4745A 16 16 15.5 700 0.25 12.2 5.0 285 57 1N4746A 18 20 14 750 0.25 13.7 5.0 250 50 1N4747A 20 22 12.5 750 0.25 15.2 5.0 225 45 1N4748A 22 23 11.5 750 0.25 16.7 5.0 205 41 1N4749A 24 25 10.5 750 0.25 18.2 5.0 190 38 1N4750A 27 35 9.5 750 0.25 20.6 5.0 170 34 1N4751A 30 40 8.5 1,000 0.25 22.8 5.0 150 30 1N4752A 33 45 7.5 1,000 0.25 25.1 5.0 135 27 V Foward Voltage = 1.2 V Maximum @ I = 200 mA for all 1N4700 series F F 1997 1N4700A Rev. B
