IMH20 ,Dual High Current BRTTHERMAL CHARACTERISTICS(1)(3)Characteristic Symbol Max UnitPower Dissipation* P 300 mWDSC-74Junctio ..
IMH20TR1G ,Dual High Current BRTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitColl ..
IMH21 , Dual digital transistors
IMH2A , NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMH3A , General purpose (dual digital transistors)
IMH4A , General purpose (dual digital transistors)
IRF7534D1 ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7534D1TR ,-20V FETKYPD -93864IRF7534D1 FETKY MOSFET & Schottky Diode®● Co-packaged HEXFET power18A K MOSFET and ..
IRF7555 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package has half the footprint area of thestandard SO-8. This makes th ..
IRF7555 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packageapplications.The new Micro8 package has half the footprint area of thestandard SO-8. This makes th ..
IRF7555 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packagePD -91865BIRF7555®HEXFET Power MOSFET● Trench Technology1 8● Ultra Low On-ResistanceS1 D1V = -20V ..
IRF7555 ,-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 packagePD -91865BIRF7555®HEXFET Power MOSFET● Trench Technology1 8● Ultra Low On-ResistanceS1 D1V = -20V ..
IMH20-IMH20TR1G
Dual High Current BRT
IMH20T1G
Dual Bias Resistor
Transistor
NPN Surface Mount Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA High Current: IC = 600 mA max Lead Free Plating
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS*Total for both Elements
