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Partno	Mfg	Dc	Qty	Available	Descript
IMC-1812 |IMC1812	*	N/a	172000	avai	Molded, Wirewound Inductor

IMC-1812 ,Molded, Wirewound InductorELECTRICAL SPECIFICATIONSTEST SELF- RATEDInductance Range: 0.010µH to 1000µH.DCRFREQ. RESONANT DCI ..
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IRF7471 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94036BSMPS MOSFETIRF7471®
IRF7471 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFETl High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters w ..
IRF7471TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency Isolated DC-DC
HEXFET
Power MOSFET Converters with Synchronous Rect ..
IRF7473 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D
Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TR ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D
Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7473PbF
HEXFET
Power MOSFET

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IMC-1812
Molded, Wirewound Inductor
IMC-1812
Vishay Dale
FEATURES Molded construction provides superior strength and
moisture resistance. Tape and reel packaging for automatic handling, 2000/
reel, EIA 481. Printed marking. Compatible with vapor phase and infrared reflow
soldering.
*Recommended minimum spacing between components.
ELECTRICAL SPECIFICATIONS
Inductance Range: 0.010µH to 1000µH.
Inductance Tolerance: ± 20% for 0.010µH to 0.39µH.
± 10% for 0.47µH to 1000µH standard.
± 10%, ± 5%, ± 3% available.
Temperature Range: - 55°C to + 125°C.
Coilform Material: Non-magneticfor 0.010µHto 0.82µH.
Powdered Iron for 1.0µH to 120µH. Ferrite for 150µH to
1000µH.
TEST EQUIPMENT H/P 4342A Q meter with Vishay Dale test fixture or
equivalent. H/P 4191A RF Impedance Analyzer (for SRF measurements). Wheatstone bridge.
Surface Mount, Molded Inductor

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