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IMBD4448CENTRALN/a3000avaiSmall Signal Diodes


IMBD4448 ,Small Signal DiodesElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93842BIRF7455SMPS MOSFET®HEXFET Power MOSFET
IRF7455TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications . High Frequency DC-DC Converters with Synchronous Rectification Benefits 0 ..
IRF7456 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456PBF , SMPS MOSFET
IRF7456TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..


IMBD4448
Small Signal Diodes
IMBD4448
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
Maximum Ratings and Thermal Characteristics
(TA = 25°C unless otherwise noted) Features
• Silicon Epitaxial Planar Diodes
• Fast switching diode in case SOT -23, especially
suited for automatic insertion.
• This diodes are also available in other case
styles including: the DO-35 case with the type
designation 1N4448, the Mini-MELF case with the
type designation LL4448, and the SOD-123 case
with the type designation 1N4448W.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
TO-236AB (SOT -23)

Dimensions in inches and (millimeters)
Mounting Pad Layout
Marking

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