IM ,MIL-C-15305 Qualified, Type LT and commercial, MoldedELECTRICAL SPECIFICATIONSTEST FREQ. SELF- RESONANT* DCR RATED**IND. MIL. MIL. Q L & Q FREQ. MIN. ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
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IRF7205TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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IRF7207 ,-20V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91879AIRF7207®HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel Mosfet2 7 V = -20 ..
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IM
MIL-C-15305 Qualified, Type LT and commercial, Molded
Vishay Dale
InductorsMilitary, MIL-C-15305 Qualified, Type LT
and Commercial, Molded
FEATURES Wide inductance range in small package.
Flame retardant coating.
Precision performance, excellent reliability, sturdy construction.
Epoxy molded construction provides superior moisture
protection.
ELECTRICAL SPECIFICATIONS
Inductance Tolerance: ± 1%, ± 3%, ± 5%, ± 10%,± 20%. Other tolerances available on request.
Insulation Resistance: 1000 Megohm minimum perMIL-STD-202, Method 302, Test Condition B.
Dielectric Strength: Per MIL-STD-202, Method 301:1000 VAC for IM-2, -4, -6, -8, -9 and -10.
200 VAC for IM-1.
MECHANICAL SPECIFICATIONS
Terminal Strength: Per MIL-STD-202, Method 211,Test Condition A: For IM-1, 3 pounds pull.
For IM-2,-4,-6,-8,-9 and -10,5 pounds pull and twist.
Weight: IM-1 = .25 gram maximum.IM-2 = .30 gram maximum.
IM-4 = .65 gram maximum.
IM-6 = .95 gram maximum.
IM-8 = 1.5 gram maximum.
IM-9 = 2.0 gram maximum.
IM-10 = 2.5 gram maximum.
MATERIAL SPECIFICATIONS
Encapsulant: Epoxy.
Standard Terminals: IM-1 and IM-2, 24 AWG;IM-4, IM-6 and IM-9, 22 AWG; IM-8, 21 AWG;
and IM-10, 20 AWG, tinned copper.
TEST EQUIPMENT*
•H/P 4342A Q-Meter.
•Measurements Corporation Megacycle Meter, Model 59.
•Wheatstone bridge.*Test procedures per MIL-C-15305.