IL4218 ,Optocoupler, Phototriac Output, High dV/dt, Very Low Input CurrentRev. 1.4, 26-Apr-04 3IL4216/ IL4217/ IL4218VISHAYVishay SemiconductorsPower Factor ConsiderationsA ..
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IL440-4 ,Optocouplersabsolute Maximum Ratings can cause permanent damage to the device. Functional operation of the devi ..
IL440-5 ,OptocouplersApplicationsIL440-3X009 5.0 mA I , 600 V V , SMD-6 (option 9)FT DRMHigh Current Triac DriverIL440-4 ..
IL440-6 ,OptocouplersElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambMinimum and maximum values are te ..
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IRF5305S ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91386CIRF5305S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF5305S)V ..
IRF5305SPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.
Absolute Maximum Ratings
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IL4217-IL4218
Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current
IL4216/ IL4217/ IL4218Document Number 83630
www.vishay.com
Optocoupler, Phototriac Output, High dV/dt, Very Low Input
Current
Features High Input Sensitivity I FT = 1.3 mA 300 mA On-State Current High Static dV/dt 10,000 V/µsec., typical Inverse Parallel SCRs Provide Commutating
dV/dt > 10 kV/ µsec Very Low Leakage < 10 µ A Isolation Test Voltage 5300 V RMS
Agency Approvals UL - File No. E52744 System Code J CSA 93751 DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1 BABT/ BSI IEC60950 IEC60965
ApplicationsSolid-state relays
Industrial controls
Office equipment
Consumer appliances.
DescriptionThe IL4216/ IL4217/ IL4218 consists of an AlGaAs
IRLED optically coupled to a pair of photosensitive
non-zero crossing SCR chips and are connected
inversely parallel to form a TRIAC. These three semi-
conductors are assembled in a six pin 0.3 inch dual in-
line package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
1.3 mA (DC).
The IL4216/ IL4217/ IL4218 uses two discrete SCRs
resulting in a commutating dV/dt of greater than
10 kV/µs. The use of a proprietary dV/dt clamp results
in a static dV/dt of greater than 10 kV/µs. This clamp
circuit has a MOSFET that is enhanced when high dV/