IKW40T120 Fast Delivery |IC PHOENIX CO.,LIMITED

IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IKW40T120 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V(BR)CES GE CCollector ..
IKW50N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW75N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IL1 ,Optocoupler, Phototransistor Output, With Base ConnectionFeatures • Current Transfer Ratio (see order information) Isolation Test Voltage 5300 VRMS6A 1 BA ..
IL-1 ,Optocoupler, Phototransistor Output, With Base Connection Document Number 836122 Rev. 1.4, 16-Apr-04IL1/ IL2/ IL5VISHAYVishay SemiconductorsOutput Parameter ..
IRF2907Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2907ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF2907ZPbFIRF2907ZSPbF IRF2907ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
IRF2907ZS ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures Advanced Process TechnologyDV = 75V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IRF2907ZS-7PPBF ,IRF2907ZS-7PPBFApplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
IRF2907ZSTRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV = 75V 175°C O ..
IRF2N60 , POWER MOSFET

IKW40T120
IGBTs & DuoPacks
IKW40T120TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diodeBest in class TO247Short circuit withstand time – 10μsDesigned for :
- Frequency Converters- Uninterrupted Power SupplyTrench and Fieldstop technology for 1200 V applications offers :- very tight parameter distribution
- high ruggedness, temperature stable behaviorNPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)
• Low EMILow Gate ChargeVery soft, fast recovery anti-parallel EmCon HE diodeComplete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
IKW40T120TrenchStop Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Integrated gate resistor6
IKW40T120TrenchStop Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
VR=600V, IF=40A,
diF/dt=800A/μs
IKW40T120TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
IKW40T120TrenchStop Series
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
20A
40A
60A
80A
100A
COLLE
OR CURRE10V100V1000V
0,1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1.Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
Figure 2.Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
ISS0W
50W
100W
150W
200W
250W
COLLE
OR CURRE
25°C75°C
10A
20A
30A
40A
50A
60A
70A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3.Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4.Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
IKW40T120TrenchStop Series
COLLE
OR CURRE
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
COLLE
OR CURRE
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5.Typical output characteristic(Tj = 25°C)Figure 6.Typical output characteristic(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V12V0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
at),
COLLE
CTOR
ITT SAT
VO
-50°C0°C50°C100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
VGE, GATE-EMITTER VOLTAGETJ, JUNCTION TEMPERATURE
Figure 7.Typical transfer characteristic
(VCE=20V)
Figure 8.Typical collector-emitter
saturation voltage as a function ofjunction temperature
(VGE = 15V)
IKW40T120TrenchStop Series
t,
ITC
TI20A40A60A1ns
10ns
100ns
t,
ITC
TI15Ω25Ω35Ω45Ω1 ns
10 ns
100 ns
1000 ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9.Typical switching times as afunction of collector current
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as afunction of gate resistor
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
D VO
-50°C0°C50°C100°C150°C0V
TJ, JUNCTION TEMPERATURETJ, JUNCTION TEMPERATURE
Figure 11.Typical switching times as a
function of junction temperature(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,Dynamic test circuit in Figure E)
Figure 12.Gate-emitter threshold voltage as
a function of junction temperature(IC = 1.5mA)
IKW40T120TrenchStop Series
ITC
EN
SSE0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
*) Eon and Etsinclude losses
ITC
EN
SSE15Ω25Ω35Ω0 mJ
5 mJ
10 mJ
15 mJ
*) Eon and Ets include losses
due to diode recovery
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13.Typical switching energy lossesas a function of collector current
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
ITC
EN
SSE
50°C100°C150°C0mJ
5mJ
10mJ
15mJ
ITC
EN
SSE
400V500V600V700V800V0mJ
5mJ
10mJ
15mJ
TJ, JUNCTION TEMPERATUREVCE, COLLECTOR-EMITTER VOLTAGE
Figure 15.Typical switching energy losses
as a function of junctiontemperature
(inductive load, VCE=600V,VGE=0/15V, IC=40A, RG=15Ω,
Figure 16.Typical switching energy losses
as a function of collector emittervoltage
(inductive load, TJ=150°C,VGE=0/15V, IC=40A, RG=15Ω,

Partno	Mfg	Dc	Qty	Available	Descript
IKW40T120	INFINEON	N/a	20	avai	IGBTs & DuoPacks
IKW40T120	INFION	N/a	120	avai	IGBTs & DuoPacks