IKW30N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IKW40T120 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V(BR)CES GE CCollector ..
IKW50N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW75N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IL1 ,Optocoupler, Phototransistor Output, With Base ConnectionFeatures • Current Transfer Ratio (see order information) Isolation Test Voltage 5300 VRMS6A 1 BA ..
IRF2807ZSTRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2Pak Packageapplications.TO-220AB D Pak TO-262IRF2807ZPbFIRF2807ZSPbF IRF2807ZLPbFAbsolute Maximum RatingsParam ..
IRF2903Z ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.GD SGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curr ..
IRF2903ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = 30VDSS 175° ..
IRF2907Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2907ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.IRF2907ZPbFIRF2907ZSPbF IRF2907ZLPbFAbsolute Maximum RatingsParameter Max. UnitsI @ T ..
IRF2907ZS ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures Advanced Process TechnologyDV = 75V Ultra Low On-Resistance DSS 175°C Operating Tempera ..
IKW30N60T
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
• Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
- low VCE(sat) Positive temperature coefficient in VCE(sat)
• Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings IKW30N60T TrenchStop Series q
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKW30N60T TrenchStop Series q
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKW30N60T TrenchStop Series q COL
CUR
100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
90A
COL
CUR10V100V1000V
0.1A
10A
100Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 10Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
tot
WER
IPATI
25°C50°C75°C100°C125°C150°C0W
40W
80W
120W
160W
COL
CUR
25°C75°C125°C0A
10A
20A
30A
40A
50ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C)
Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C)
IKW30N60T TrenchStop Series q COL
CUR1V2V3V
10A
20A
30A
40A
50A
60A
70A
80A
COL
CUR1V2V3V
10A
30A
50AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
COL
CUR2V4V6V8V0A
10A
20A
30A
40A
50A
(sat),
COL
T S
AGE
0°C50°C100°C150°C0.0V
0.5V
1.0V
1.5V
2.0V
2.5VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=10V) Figure 8. Typical collector-emitter saturation voltage as a function of
junction temperature
(VGE = 15V)
IKW30N60T TrenchStop Series q CHIN
TIME10A20A30A1ns
10ns
100ns
CHIN
TIME
10Ω20Ω30Ω40Ω10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 10Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
CHIN
TIME
25°C50°C75°C100°C125°C150°C10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°C0VTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG=10Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature
(IC = 0.43mA)
IKW30N60T TrenchStop Series q G EN10A20A30A40A50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
*) Eon and Ets include losses
due to diode recovery
G EN10Ω20Ω30Ω40Ω
0.0mJ
1.0mJ
2.0mJ
3.0mJ
*) Eon and Ets include losses
due to diode recoveryIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 10Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
G EN
25°C50°C75°C100°C125°C150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
*) Eon and Ets include losses
due to diode recovery
G EN
300V350V400V450V500V550V0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
*) Eon and Ets include losses
due to diode recoveryTJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, RG = 10Ω,
Figure 16. Typical switching energy losses as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, RG = 10Ω,
