IKW25T120 Fast Delivery |IC PHOENIX CO.,LIMITED

IKW25T120 ,IGBTs & DuoPacksapplications offers :P-TO-247-3-1- very tight parameter distribution(TO-247AC)- high ruggedness, te ..
IKW30N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IKW40T120 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V(BR)CES GE CCollector ..
IKW50N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW75N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF

IKW25T120
IGBTs & DuoPacks
IKW25T120TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diodeApprox. 1.0Vreduced VCE(sat) and 0.5Vreduced VF compared to BUP314DShort circuit withstand time – 10μsDesigned for :- Frequency Converters
- Uninterrupted Power SupplyTrench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution- high ruggedness, temperature stable behaviorNPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMILow Gate ChargeVery soft, fast recovery anti-parallel EmCon HE diodeComplete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
IKW25T120TrenchStop Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
IKW25T120TrenchStop Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
VR=600V, IF=25A,
diF/dt=800A/μs
IKW25T120TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
IKW25T120TrenchStop Series
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
COLLE
OR CURRE10V100V1000V
0,1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1.Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 22Ω)
Figure 2.Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
ISS0W
50W
100W
150W
COLLE
OR CURRE
25°C75°C
10A
20A
30A
40A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3.Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4.Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
IKW25T120TrenchStop Series
COLLE
OR CURRE1V2V3V4V5V6V
10A
20A
30A
40A
50A
60A
70A
COLLE
OR CURRE
10A
20A
30A
40A
50A
60A
70A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5.Typical output characteristic(Tj = 25°C)Figure 6.Typical output characteristic(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V12V0A
at),
COLLE
CTOR
ITT SAT
VO
-50°C0°C50°C100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
VGE, GATE-EMITTER VOLTAGETJ, JUNCTION TEMPERATURE
Figure 7.Typical transfer characteristic
(VCE=20V)
Figure 8.Typical collector-emitter
saturation voltage as a function ofjunction temperature
(VGE = 15V)
IKW25T120TrenchStop Series
t,
ITC
TI10A20A30A40A1ns
10ns
100ns
t,
ITC
TI15Ω25Ω35Ω45Ω1 ns
10 ns
100 ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9.Typical switching times as afunction of collector current
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=22Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as afunction of gate resistor
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
D VO
-50°C0°C50°C100°C150°C0V
TJ, JUNCTION TEMPERATURETJ, JUNCTION TEMPERATURE
Figure 11.Typical switching times as a
function of junction temperature(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=22Ω,Dynamic test circuit in Figure E)
Figure 12.Gate-emitter threshold voltage as
a function of junction temperature(IC = 1.0mA)
IKW25T120TrenchStop Series
ITC
EN
SSE0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
10,0mJ
12,0mJ
14,0mJ
ITC
EN
SSE15Ω25Ω35Ω0 mJ
2 mJ
4 mJ
6 mJ
8 mJ
*) Eon and Ets include losses
due to diode recovery
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13.Typical switching energy lossesas a function of collector current
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=22Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor
(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
ITC
EN
SSE
50°C100°C150°C0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
ITC
EN
SSE
400V500V600V700V800V0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
8mJ
9mJ
10mJ
TJ, JUNCTION TEMPERATUREVCE, COLLECTOR-EMITTER VOLTAGE
Figure 15.Typical switching energy losses
as a function of junctiontemperature
(inductive load, VCE=600V,VGE=0/15V, IC=25A, RG=22Ω,
Figure 16.Typical switching energy losses
as a function of collector emittervoltage
(inductive load, TJ=150°C,VGE=0/15V, IC=25A, RG=22Ω,

Partno	Mfg	Dc	Qty	Available	Descript
IKW25T120 \|IKW25T120	Infineon	N/a	5000	avai	IGBTs & DuoPacks