IKW08T120 ,IGBTs & DuoPacksapplications offers : P-TO-247-3-1 - very tight parameter distribution (TO-247AC) - high ruggedne ..
IKW20N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW25T120 ,IGBTs & DuoPacksapplications offers :P-TO-247-3-1- very tight parameter distribution(TO-247AC)- high ruggedness, te ..
IKW30N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IKW40T120 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V(BR)CES GE CCollector ..
IRF2807STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures com-bine to make this design an extremely efficientand reliable device for use in Automoti ..
IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IKW08T120
IGBTs & DuoPacks
IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings IKW08T120 TrenchStop Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
IKW08T120 TrenchStop Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKW08T120 TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKW08T120 TrenchStop Series COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
15A
COLLE
OR CURRE10V100V1000V
0,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
ISS
25°C50°C75°C100°C125°C0W
10W
30W
50W
60W
70W
COLLE
OR CURRE
25°C75°C125°C
10A
15ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≥ 15V, Tj ≤ 150°C)
IKW08T120 TrenchStop Series COLLE
OR CURRE1V2V3V4V5V6V
10A
15A
20A
COLLE
OR CURRE1V2V3V4V5V6V
10A
15A
20AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V12V0A
at),
COLLE
CTOR
ITT SA
TION
VOL
-50°C0°C50°C100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8.
saturation voltage as a function of junction temperature
(VGE = 15V)
IKW08T120 TrenchStop Series t,
CHI10A15A1ns
10ns
100nsr
t,
CHI50Ω100Ω150Ω200Ω1 ns
10 ns
100 nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a function of collector current
(inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as a function of gate resistor
(inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
T TR
OLD
VOLTA
-50°C0°C50°C100°C150°CTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE=600V,
VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature (IC = 0.3mA)
IKW08T120 TrenchStop Series ITC
EN10A15A0,0mJ
2,0mJ
4,0mJ
6,0mJ
*) Eon and Etsinclude losses
due to diode recovery
ITC
EN50Ω100Ω150Ω200Ω0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
*) Eon and Ets include losses
due to diode recoveryoffIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses as a function of collector current
(inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses as a function of gate resistor
(inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
ITC
EN
50°C100°C150°C
1,0mJ
1,5mJ
*) Eon and Ets include losses
due to diode recovery
ITC
EN
400V500V600V700V800V0mJ
1mJ
2mJ
3mJ
*) Eon and Ets include losses
due to diode recoveryoffTJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81Ω,
Figure 16.Typical switching energy losses
as a function of collector emitter voltage
(inductive load, TJ=150°C, VGE=0/15V, IC=25A, RG=22Ω,
