IKW03N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits - temperature stable behavior P-TO-247- ..
IKW08T120 ,IGBTs & DuoPacksapplications offers : P-TO-247-3-1 - very tight parameter distribution (TO-247AC) - high ruggedne ..
IKW20N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW25T120 ,IGBTs & DuoPacksapplications offers :P-TO-247-3-1- very tight parameter distribution(TO-247AC)- high ruggedness, te ..
IKW30N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IRF2807STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF2807Z ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagefeatures com-bine to make this design an extremely efficientand reliable device for use in Automoti ..
IRF2807Z. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLO Advanced Process Technology®HEXFET Power MOSFETO Ultra Low On-ResistanceO Dynami ..
IRF2807ZPBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeaturesIRF2807ZLPbF
IKW03N120H2
IGBTs & DuoPacks
IKP03N120H2, IKB03N120H2 IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for: - SMPS
- Lamp Ballast
- ZVS-Converter
2nd generation HighSpeed-Technology
for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Tj
Package Ordering Code Q67040-S4594
Maximum Ratings V
IKP03N120H2, IKB03N120H2 IKW03N120H2
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKP03N120H2, IKB03N120H2 IKW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKP03N120H2, IKB03N120H2 IKW03N120H2
Switching Energy ZVT, Inductive Load
IGBT Characteristic IKP03N120H2, IKB03N120H2 IKW03N120H2
COL
R C
URR
10Hz100Hz1kHz10kHz100kHz
10A
12A
COL
R C
URR10V100V1000V0,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
tot
IPATI
25°C50°C75°C100°C125°C
10W
20W
30W
40W
50W
60W
R CU
25°C50°C75°C100°C125°C150°C0A
10A
12ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C)
IKP03N120H2, IKB03N120H2 IKW03N120H2
COL
URR1V2V3V4V5V
10A
COL
URR1V2V3V4V5V
10AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics (Tj = 25°C)
Figure 6. Typical output characteristics (Tj = 150°C)
COL
URR5V7V9V0A
10A
12A
(sat)
LLE
R SA
TURA
LTAGE
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics (VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature (VGE = 15V)
IKP03N120H2, IKB03N120H2 IKW03N120H2
SWIT
G T
IME2A4A
1ns
10ns
100ns
1000ns
SWIT
G T
IME50Ω100Ω150Ω1ns
10ns
100ns
1000nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
t,
ING TIMES
25°C50°C75°C100°C125°C150°C1ns
10ns
100ns
1000ns
GE(th
),
ITTE
HRES
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature (IC = 0.09mA)
IKP03N120H2, IKB03N120H2 IKW03N120H2
ING E
SES2A4A
0.0mJ
0.5mJ
1.0mJ
ING E
SES50Ω100Ω150Ω200Ω250Ω
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω, dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
SWI
EN
25°C80°C125°C150°C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
off
OFF
SW
CHING
EN
SS
0V/us1000V/us2000V/us3000V/us0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
IC=1A, TJ=150°CC=1A, TJ=25°CC=3A, TJ=150°CC=3A, TJ=25°CTj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching (dynamic test circuit in Fig. E)
