IKP01N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D²-PAK) - te ..
IKP04N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-220-3-1 (TO-220AB) - high ruggedn ..
IKP10N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP15N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP20N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
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IRF2807.. ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
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IKP01N120H2
IGBTs & DuoPacks
IKP01N120H2, IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for: - SMPS
- Lamp Ballast
- ZVS-Converter - optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Tj
Package Ordering Code 150°C P-TO-263 (D2PAK) Q67040-S4590
Maximum Ratings IKP01N120H2, IKB01N120H2
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKP01N120H2, IKB01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKP01N120H2, IKB01N120H2
Switching Energy ZVT, Inductive Load
IGBT Characteristic IKP01N120H2, IKB01N120H2 COL
CUR
10Hz100Hz1kHz10kHz100kHz
COL
CUR10V100V1000V
,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 241Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
WER D
ATI
25°C50°C75°C100°C125°C150°C
10W
15W
20W
25W
30W
COL
CURR
25°C50°C75°C100°C125°C150°C0ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≤ 15V, Tj ≤ 150°C)
IKP01N120H2, IKB01N120H2 COL
URR1V2V3V4V5V
COL
URR1V2V3V4V5V6VVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics (Tj = 25°C)
Figure 6. Typical output characteristics (Tj = 150°C)
COL
URR5V7V9V0A
(sat)
LLE
R SA
TURA
LTAGE
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics (VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature (VGE = 15V)
IKP01N120H2, IKB01N120H2 SWIT
G T
IME1A2A
10ns
100ns
1000ns
SWIT
G T
IME
50Ω100Ω150Ω200Ω1ns
10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω, dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E)
t,
ING TIMES
0°C50°C100°C150°C
10ns
100ns
GE(th
),
ITTE
HRES
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature (IC = 0.03mA)
IKP01N120H2, IKB01N120H2 SWI
G EN1A2A3A
0.0mJ
0.2mJ
0.4mJ
0.6mJ
SWI
G EN
50Ω100Ω150Ω200Ω0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E )
CHING
SSES
-40°C25°C100°C150°C0.00mJ
0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJ
f,
RN OF
F SW
ITCHING
0V/us1000V/us2000V/us3000V/us0.00mJ
0.02mJ
0.04mJ
0.06mJC=0.3A, TJ=25°C Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω, dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching (dynamic test circuit in Fig. E)
