IKB15N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-263-3-2 (D²-PAK)(TO-263AB) - high r ..
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IKP01N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-220-3-1 P-TO-263-3-2 (D²-PAK) - te ..
IRF220 ,N-Channel Power MOSFETs/ 7A/ 150-200V
IRF2204 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF2204S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF2204S IRF2204LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 VFeatures:The HEXFET transistors also feature all of the well estab- Repetitive Avalanche Ratingsli ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IKB15N60T
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IKB15N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
• Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
- low VCE(sat) Positive temperature coefficient in VCE(sat)
• Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings IKB15N60T TrenchStop Series q
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKB15N60T TrenchStop Series q
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKB15N60T TrenchStop Series q COL
CUR
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
COL
CUR10V100V1000V
0.1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
tot
WER
IPATI
25°C50°C75°C100°C125°C150°C0W
20W
40W
60W
80W
100W
120W
COL
CUR
25°C75°C125°C0A
10A
20A
30ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C)
Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C)
IKB15N60T TrenchStop Series q COL
CUR1V2V3V
10A
15A
20A
25A
30A
35A
40A
COL
CUR1V2V3V
10A
15A
30A
35AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
COL
CUR2V4V6V8V0A
10A
15A
20A
25A
30A
35A
(sat),
COL
T S
AGE
0°C50°C100°C150°C0.0V
0.5V
1.0V
1.5V
2.0V
2.5VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V) Figure 8. Typical collector-emitter saturation voltage as a function of
junction temperature
(VGE = 15V)
IKB15N60T TrenchStop Series q CHIN
TIME5A10A15A20A25A
1ns
10ns
100ns
CHIN
TIME
10Ω20Ω30Ω40Ω50Ω10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 15Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
CHIN
TIME
25°C50°C75°C100°C125°C150°C
10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°C0VTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature
(IC = 0.21mA)
IKB15N60T TrenchStop Series q G EN5A10A15A20A25A0.0mJ
0.4mJ
0.8mJ
1.2mJ
1.6mJ
*) Eon and Etsinclude losses
due to diode recovery
G EN10Ω20Ω30Ω40Ω50Ω60Ω70Ω80Ω0.2 mJ
0.4 mJ
0.6 mJ
0.8 mJ
1.0 mJ
1.2 mJ
1.4 mJ
1.6 mJ
*) Eon and Ets include losses
due to diode recoveryIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 15Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
G EN
25°C50°C75°C100°C125°C150°C0.2mJ
G EN
300V350V400V450V0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
*) Eon and Ets include losses
due to diode recoveryTJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG = 15Ω,
Figure 16. Typical switching energy losses as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 15A, RG = 15Ω,
