IKA10N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IKB03N120H2 ,1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.applications offers: - loss reduction in resonant circuits - temperature stable behavior P-TO-247- ..
IKB06N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB10N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB15N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-263-3-2 (D²-PAK)(TO-263AB) - high r ..
IKCS12F60B2C , Control integrated Power System
IRF220 ,N-Channel Power MOSFETs/ 7A/ 150-200V
IRF2204 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF2204S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF2204S IRF2204LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 VFeatures:The HEXFET transistors also feature all of the well estab- Repetitive Avalanche Ratingsli ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IKA10N60T
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs
• Designed for : - Variable Speed Drive for washing machines, air
conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
Maximum Ratings IKA10N60T TrenchStop Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKA10N60T TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKA10N60T TrenchStop Series COL
CUR
10Hz100Hz1kHz10kHz100kHz
10A
15A
20A
25A
30A
COL
CUR10V100V1000V
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
tot
WER
IPATI
25°C50°C75°C100°C125°C150°C0W
10W
15W
20W
25W
30W
COL
CUR
25°C75°C125°C0A
10ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C)
Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C)
IKA10N60T TrenchStop Series COL
CUR1V2V3V4V
10A
15A
20A
25A
30A
COL
CUR1V2V3V4V5V
10A
15A
30AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 175°C)
COL
CUR2V4V6V8V10V0A
10A
15A
20A
25A
(sat),
COL
T S
AGE
-50°C0°C50°C100°C150°C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter saturation voltage as a function of
junction temperature (VGE = 15V)
IKA10N60T TrenchStop Series CHIN
TIME5A10A15A20A
1ns
10ns
100ns
CHIN
TIME
10Ω20Ω30Ω40Ω50Ω
1ns
10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
CHIN
TIME
25°C50°C75°C100°C125°C150°C
1ns
10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°C0VTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
IKA10N60T TrenchStop Series G EN5A10A15A0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJ
*) Eon and Etsinclude losses
due to diode recovery
G EN
10Ω20Ω30Ω40Ω50Ω0,0 mJ
0,2 mJ
0,4 mJ
0,6 mJ
0,8 mJ
*) Eon and Ets include losses
due to diode recoveryIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
G EN
50°C100°C150°C0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
0,6mJ
G EN
300V350V400V450V500V550V0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
*) Eon and Ets include losses
due to diode recoveryTJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction
temperature (inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG = 23Ω,
Figure 16. Typical switching energy losses as a function of collector emitter
voltage (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, RG = 23Ω,
