IKA03N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel ..
IKA10N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IKB03N120H2 ,1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.applications offers: - loss reduction in resonant circuits - temperature stable behavior P-TO-247- ..
IKB06N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB10N60T , Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB15N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-263-3-2 (D²-PAK)(TO-263AB) - high r ..
IRF220 ,N-Channel Power MOSFETs/ 7A/ 150-200V
IRF2204 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Curr ..
IRF2204S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF2204S IRF2204LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 VFeatures:The HEXFET transistors also feature all of the well estab- Repetitive Avalanche Ratingsli ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IRF230 ,N-Channel Power MOSFETs/ 12A/ 150-200 Vapplications such as switching Ease of Parallelingpower supplies, motor controls, inverters, chopp ..
IKA03N120H2
IGBTs & DuoPacks
IKA03N120H2
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IKA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IKA03N120H2
Switching Energy ZVT, Inductive Load
IGBT Characteristic IKA03N120H2 R CU
10Hz100Hz1kHz10kHz100kHz
10A
R CU10V100V1000V0,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
R D
ISSI
ION
25°C50°C75°C100°C125°C
10W
20W
R CU
25°C50°C75°C100°C125°C150°C0ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≤ 15V, Tj ≤ 150°C)
IKA03N120H2 LLE
CTOR
RREN1V2V3V4V5V
10A
LLE
CTOR1V2V3V4V5V0A
10AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics (Tj = 25°C)
Figure 6. Typical output characteristics (Tj = 150°C)
R CU5V7V9V
10A
12A
t),
COLL
SA
TIO
VO
LTAG
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics (VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature (VGE = 15V)
IKA03N120H2 t,
CHING
TI
MES2A4A
1ns
10ns
100ns
1000ns
t,
CHING
TI
MES50Ω100Ω150Ω1ns
10ns
100ns
1000nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
CHING TIME
25°C50°C75°C100°C125°C150°C1ns
10ns
100ns
1000ns
(th
),
GAT
R THR
D V
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature (IC = 0.09mA)
