IHW40T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IHY20N120R3 , Reverse conducting IGBT with monolithic body diode
IK3051 , Constant Voltage and Constant Current Controller for Adaptors and Battery Chargers
IK3051 , Constant Voltage and Constant Current Controller for Adaptors and Battery Chargers
IK3051 , Constant Voltage and Constant Current Controller for Adaptors and Battery Chargers
IK3051A , Constant Voltage and Constant Current Controller for Adaptors and Battery Chargers
IRF1310NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationswhtmstiite Maximum Ratings
Parameter Max. Units
ID @ TC _ 25'C Canllnuous Dram Curr ..
IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRF1312 ,80V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312L ,80V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312S ,80V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IHW40T120
IGBTs & DuoPacks
IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Short circuit withstand time – 10µs
• Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmCon™ HE diode
• Low EMI Application specific optimisation of inverse diode
Maximum Ratings Unit IHW40T120 Soft Switching Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
IHW40T120 Soft Switching Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHW40T120 Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHW40T120 Soft Switching Series COL
CUR
10Hz100Hz1kHz10kHz100kHz
20A
40A
60A
80A
100A
COL
CUR10V100V1000V
0,1A
10A
100Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
WER D
ATI
25°C50°C75°C100°C125°C0W
50W
100W
150W
COL
CUR
25°C75°C125°C0A
10A
20A
30A
40A
50A
60A
70ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≥ 15V, Tj ≤ 150°C)
IHW40T120 Soft Switching Series COL
CUR1V2V3V4V5V6V
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
COL
CUR1V2V3V4V5V6V
10A
20A
30A
40A
50A
60A
70A
80A
90A
100AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 150°C)
COL
CUR2V4V6V8V10V12V
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
(sat),
COL
T S
AGE
-50°C0°C50°C100°C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8.Typical collector-emitter saturation voltage as a function of
junction temperature (VGE = 15V)
IHW40T120 Soft Switching Series CHIN
TIME20A40A60A
1ns
10ns
100nsd(on)
CHIN
TIME15Ω25Ω35Ω45Ω1 ns
10 ns
100 ns
1000 nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as a
function of gate resistor (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
CHIN
TIME
0°C50°C100°C150°C10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°CTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA)
