IHW15T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IHW20N120R2 , Reverse Conducting IGBT with monolithic body diode
IHW25N120R2 , Reverse Conducting IGBT with monolithic body diode
IHW30N100R , Reverse Conducting IGBT with monolithic body diode
IHW30N120R2 , Reverse Conducting IGBT with monolithic body diode
IHW30N90T , Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IRF123 ,N-Channel Power MOSFETs/ 11 A/ 60-100 VElectrical Characteristics (T C: 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit T ..
IRF130 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VPD - 90333F IRF13 ..
IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF131 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VElectrical Characteristics (T c= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unlt T ..
IRF1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR RectifierWuan-eDem.
Advanced Process Technology
Dynamic dv/dt Rating
175° ..
IHW15T120
IGBTs & DuoPacks
IHW15T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode Short circuit withstand time 10µs
• Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmCon HE diode
• Low EMI Application specific optimisation of inverse diode
Maximum Ratings Unit IHW15T120 Soft Switching Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
IHW15T120 Soft Switching Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHW15T120 Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHW15T120 Soft Switching Series COL
CUR
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
COL
CUR10V100V1000V
0,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 56Ω)
Figure 2. IGBT Safe operating area (D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
IPA
TED
POW
25°C50°C75°C100°C125°C0W
20W
40W
60W
80W
100W
R CU
25°C75°C125°C0A
10A
20A
30ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≥ 15V, Tj ≤ 150°C)
IHW15T120 Soft Switching Series R CU1V2V3V4V5V6V
10A
20A
30A
40A
R CU1V2V3V4V5V6V
10A
20A
30A
40AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 150°C)
COLL
R C
URR2V4V6V8V10V12V
(sat
), CO
EMI
TT S
ON V
-50°C0°C50°C100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (VGE = 15V)
IHW15T120 Soft Switching Series CHIN
TIME10A20A
1ns
10ns
100ns
CHIN
TIME
10Ω35Ω60Ω85Ω110Ω1ns
10ns
100ns
1µsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
CHIN
TIME
0°C50°C100°C150°C10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°CTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.6mA)
