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IHW15N120R3 , Reverse conducting IGBT with monolithic body diode
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IHP10T120
IGBTs & DuoPacks
IHP10T120 Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode • Short circuit withstand time 10µs
• Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Very low Vce(sat) Very soft, fast recovery anti-parallel EmCon HE diode
• Low EMI Application specific optimisation of inverse diode
Maximum Ratings µs
IHP10T120 Soft Switching Series
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
IHP10T120 Soft Switching Series
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHP10T120 Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic IHP10T120 Soft Switching Series
COL
CUR
100Hz1kHz10kHz100kHz
10A
15A
20A
COL
CUR10V100V1000V
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
t,
ISSI
D P
WER
25°C50°C75°C100°C125°C0W
20W
40W
60W
80W
100W
120W
140W
R CU
25°C75°C125°C
10A
15A
20A
25ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≥ 15V, Tj ≤ 150°C)
IHP10T120 Soft Switching Series
R CU1V2V3V4V5V6V
10A
15A
20A
R CU1V2V3V4V5V6V
10A
15A
20AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 150°C)
COLL
R C
URR2V4V6V8V10V12V
10A
15A
(sat
), CO
EMI
TT S
ON V
-50°C0°C50°C100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (VGE = 15V)
IHP10T120 Soft Switching Series
CHIN
TIME10A15A
1ns
10ns
100ns
CHIN
TIME50Ω100Ω150Ω200Ω1 ns
10 ns
100 nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor (inductive load, TJ=150°C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
CHIN
TIME
0°C50°C100°C150°C10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°CTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
