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Partno	Mfg	Dc	Qty	Available	Descript
IDD15E60	infineon	N/a	10000	avai	Silicon Power Diodes

IDD15E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 15 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDD23E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 23 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDP04E120 ,Silicon Power DiodesCharacteristics- - 2.9 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP06E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 500R ..
IDP09E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 9 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDP09E60 ,Silicon Power DiodesCharacteristics- - 2.6 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDD15E60
Silicon Power Diodes
IDD15E60
Fast Switching EmCon DiodeProduct Summary
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
IDD15E60
Thermal Characteristics
Characteristics
Static Characteristics
IDD15E60
Dynamic Characteristics
IDD15E60
2 Diode forward currentF = f(TC)
parameter: Tj≤ 175°C
10
15
20
30
1 Power dissipationtot = f (TC)
parameter: T
10
20
30
40
50
60
70
90
tot
3 Typ. diode forward current
IF = f (VF)
10
20
30
50
4 Typ. diode forward voltage
VF = f (Tj)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IDD15E60
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
50
100
150
200
250
300
350
400
500
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
550
650
750
850
950
1050
1150
1250
1450
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
10
11
12
13
14
15
16
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
11
IDD15E60
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-3 10
-2 10
-1 10 10 10
IDD15E60
thJ

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