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Partno	Mfg	Dc	Qty	Available	Descript
IDB30E60 |IDB30E60	infineon	N/a	5000	avai	Silicon Power Diodes

IDB30E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 30 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDC5 , 5 VDC SOLID-STATE OPTO-ISOLATED I/O MODULES
IDC-5 , IAC/OAC IDC/ODC Input/Output Modules
IDC-5 , IAC/OAC IDC/ODC Input/Output Modules
IDC5Q , Plug into mounting borards for Quad Series modules
IDD09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDB30E60
Silicon Power Diodes
IDP30E60
IDB30E60
Fast Switching EmCon DiodeProduct Summary
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP30E60
IDB30E60
Thermal Characteristics
Characteristics
Static Characteristics
IDP30E60
IDB30E60
Dynamic Characteristics
IDP30E60
IDB30E60
2 Diode forward currentF = f(TC)
parameter: Tj≤ 175°C
10
15
20
25
30
35
40
45
55
1 Power dissipationtot = f (TC)
parameter: T
10
20
30
40
50
60
70
80
90
100
110
120
tot
3 Typ. diode forward current
IF = f (VF)
10
20
30
40
50
60
70
90
4 Typ. diode forward voltage
VF = f (Tj)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IDP30E60
IDB30E60
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
100
150
200
250
300
350
400
500
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
1000
1200
1400
1600
1800
2000
2200
2600
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
10
12
14
16
18
20
22
26
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
10
12
IDP30E60
IDB30E60
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
IDP30E60
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