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Partno	Mfg	Dc	Qty	Available	Descript
IDB30E120	INF	N/a	4000	avai	Silicon Power Diodes

IDB30E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 30 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDB30E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 30 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDC5 , 5 VDC SOLID-STATE OPTO-ISOLATED I/O MODULES
IDC-5 , IAC/OAC IDC/ODC Input/Output Modules
IDC-5 , IAC/OAC IDC/ODC Input/Output Modules
IDC5Q , Plug into mounting borards for Quad Series modules
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDB30E120
Silicon Power Diodes
IDP30E120
IDB30E120
Fast Switching EmCon DiodeProduct Summary
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP30E120
IDB30E120
Thermal Characteristics
Characteristics
Static Characteristics
IDP30E120
IDB30E120
Dynamic Characteristics
IDP30E120
IDB30E120
2 Diode forward currentF = f(TC)
parameter: Tj≤ 150°C
10
15
20
25
30
35
40
45
55
1 Power dissipationtot = f (TC)
parameter: T
10
20
30
40
50
60
70
80
90
100
110
120
tot
3 Typ. diode forward current
IF = f (VF)
10
20
30
40
50
60
70
90
4 Typ. diode forward voltage
VF = f (Tj)
1.2
1.4
1.6
1.8
2.4
IDP30E120
IDB30E120
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
200
300
400
500
600
700
800
900
1100
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
2500
3000
3500
4000
4500
5000
5500
6500
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
10
15
20
25
35
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
10
12
14
18
IDP30E120
IDB30E120
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJ

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