IDP23E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 1900R ..
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IDB23E60-IDP23E60
Silicon Power Diodes
IDP23E60
IDB23E60
Fast Switching EmCon DiodeProduct Summary
Feature• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP23E60
IDB23E60
Thermal Characteristics
Characteristics
Static Characteristics
IDP23E60
IDB23E60
Dynamic Characteristics
IDP23E60
IDB23E60
2 Diode forward currentF = f(TC)
parameter: Tj≤ 175°C
10
15
20
25
30
35
45
1 Power dissipationtot = f (TC)
parameter: T
15
30
45
60
75
90
120
tot
3 Typ. diode forward currentIF = f (VF)
10
20
30
40
50
70
4 Typ. diode forward voltageVF = f (Tj)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IDP23E60
IDB23E60
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
100
150
200
250
300
350
400
500
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
10
12
14
16
18
20
24
8 Typ. reverse recovery softness factorS = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
10
11
13
IDP23E60
IDB23E60
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
IDP23E60
thJ
