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Partno	Mfg	Dc	Qty	Available	Descript
IDB18E120	INF	N/a	6000	avai	Silicon Power Diodes
IDP18E120	Infineon	N/a	10000	avai	Silicon Power Diodes

IDP18E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 18 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDP23E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 1900R ..
IDT04S60C , 2nd Generation thinQ SiC Schottky Diode
IDT06S60C , 2nd generation thinQ SiC Schottky Diode
IDT2305-1DCGI , 3.3V ZERO DELAY CLOCK BUFFER
IDT2305-1DCI , 3.3V ZERO DELAY CLOCK BUFFER
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

IDB18E120-IDP18E120
Silicon Power Diodes
IDP18E120
IDB18E120
Fast Switching EmCon DiodeProduct Summary
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP18E120
IDB18E120
Thermal Characteristics
Characteristics
Static Characteristics
IDP18E120
IDB18E120
Dynamic Characteristics
IDP18E120
IDB18E120
2 Diode forward currentF = f(TC)
parameter: Tj≤ 150°C
10
15
20
25
35
1 Power dissipationtot = f (TC)
parameter: T
10
20
30
40
50
60
70
80
90
100
120
tot
3 Typ. diode forward current
IF = f (VF)
12
18
24
30
36
42
54
4 Typ. diode forward voltage
VF = f (Tj)
1.2
1.4
1.6
1.8
2.2
2.6
IDP18E120
IDB18E120
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
100
200
300
400
500
600
700
800
1000
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
10
15
20
30
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
10
12
14
18
IDP18E120
IDB18E120
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-5 10
-4 10
-3 10
-2 10
-1 10 10
IDP18E120
thJ

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