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Partno	Mfg	Dc	Qty	Available	Descript
IDB12E120	infineon	N/a	870	avai	Silicon Power Diodes

IDB12E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 12 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDB15E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 15 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDB18E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 14 ..
IDB23E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 23 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDB30E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 30 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDB30E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 30 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDB12E120
Silicon Power Diodes
IDP12E120
IDB12E120
Fast Switching EmCon DiodeProduct Summary
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP12E120
IDB12E120
Thermal Characteristics
Characteristics
Static Characteristics
IDP12E120
IDB12E120
Dynamic Characteristics
IDP12E120
IDB12E120
2 Diode forward currentF = f(TC)
parameter: Tj≤ 150°C
10
15
20
30
1 Power dissipationtot = f (TC)
parameter: T
10
20
30
40
50
60
70
80
100
tot
3 Typ. diode forward current
IF = f (VF)
12
16
20
24
28
36
4 Typ. diode forward voltage
VF = f (Tj)
1.2
1.4
1.6
1.8
2.4
IDP12E120
IDB12E120
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
100
200
300
400
500
600
800
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2500
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
10
12
14
16
18
20
22
26
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
10
11
12
13
15
IDP12E120
IDB12E120
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJ

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