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Partno	Mfg	Dc	Qty	Available	Descript
IDB09E60	INF	N/a	17000	avai	Silicon Power Diodes
IDB09E60 \|IDB09E60	infineon	N/a	5000	avai	Silicon Power Diodes
IDP09E60 \|IDP09E60	infineon	N/a	5000	avai	Silicon Power Diodes

IDB09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB09E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 750R ..
IDB12E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 12 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDB15E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 15 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDB18E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 14 ..
IDB23E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 23 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

IDB09E60-IDP09E60
Silicon Power Diodes
IDP09E60
IDB09E60
Fast Switching EmCon DiodeProduct Summary
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP09E60
IDB09E60
Thermal Characteristics
Characteristics
Static Characteristics
IDP09E60
IDB09E60
Dynamic Characteristics
IDP09E60
IDB09E60
2 Diode forward currentF = f(TC)
parameter: Tj≤ 175°C
10
12
14
16
20
1 Power dissipationtot = f (TC)
parameter: T
10
15
20
25
30
35
40
45
50
60
tot
3 Typ. diode forward current
IF = f (VF)
12
15
18
21
27
4 Typ. diode forward voltage
VF = f (Tj)
1.2
1.4
1.6
IDP09E60
IDB09E60
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
50
100
150
200
250
350
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
300
350
400
450
500
550
600
650
700
800
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
10
11
12
14
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
10
14
IDP09E60
IDB09E60
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-3 10
-2 10
-1 10 10 10
IDP09E60
thJ

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