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Partno	Mfg	Dc	Qty	Available	Descript
IDB06E60 |IDB06E60	infineon	N/a	5000	avai	Silicon Power Diodes
IDP06E60 |IDP06E60	infineon	N/a	5000	avai	Silicon Power Diodes

IDB06E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 6 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB06S60C , 2nd Generation thinQ SiC Schottky Diode
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
IDB09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB09E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 750R ..
IDB12E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 12 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDB06E60 -IDP06E60
Silicon Power Diodes
IDP06E60
IDB06E60
Fast Switching EmCon DiodeProduct Summary
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP06E60
IDB06E60
Thermal Characteristics
Characteristics
Static Characteristics
IDP06E60
IDB06E60
Dynamic Characteristics
IDP06E60
IDB06E60
2 Diode forward currentF = f(TC)
parameter: Tj ≤ 175°C
10
12
16
1 Power dissipationtot = f (TC)
parameter: T
10
15
20
25
30
35
40
50
tot
3 Typ. diode forward current
IF = f (VF)
10
12
14
18
4 Typ. diode forward voltage
VF = f (Tj)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IDP06E60
IDB06E60
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
50
100
150
200
300
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
250
275
300
325
350
375
400
425
450
475
500
550
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
11
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
11
IDP06E60
IDB06E60
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
IDP06E60
thJ

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