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IDB04E120-IDP04E120 Fast Delivery,Good Price
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Partno	Mfg	Dc	Qty	Available	Descript
IDB04E120	INF	N/a	17000	avai	Silicon Power Diodes
IDB04E120 |IDB04E120	infineon	N/a	5000	avai	Silicon Power Diodes
IDP04E120 |IDP04E120	infineon	N/a	5000	avai	Silicon Power Diodes

IDB04E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 4 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDB04E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 35 ..
IDB06E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 6 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB06S60C , 2nd Generation thinQ SiC Schottky Diode
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
IDB09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors

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IDB04E120-IDP04E120
Silicon Power Diodes
IDP04E120
IDB04E120
Fast Switching EmCon DiodeProduct Summary
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
P-TO220-3.SMDP-TO220-2-2.
IDP04E120
IDB04E120
Thermal Characteristics
Characteristics
Static Characteristics
IDP04E120
IDB04E120
Dynamic Characteristics
IDP04E120
IDB04E120
2 Diode forward currentF = f(TC)
parameter: Tj≤ 150°C
10
12
1 Power dissipationtot = f (TC)
parameter: T
10
15
20
25
30
35
45
tot
3 Typ. diode forward current
IF = f (VF)
10
12
4 Typ. diode forward voltage
VF = f (Tj)
1.2
1.4
1.6
1.8
2.4
IDP04E120
IDB04E120
5 Typ. reverse recovery timerr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
50
100
150
200
250
300
350
400
500
6 Typ. reverse recovery chargerr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
400
450
500
550
600
650
700
750
800
900
7 Typ. reverse recovery currentrr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
10
12
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
10
12
14
16
20
IDP04E120
IDB04E120
9 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJ

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