ID82C89 ,CMOS Bus Arbiter82C89March 1997 CMOS Bus Arbiter
IDB04E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 4 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDB04E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 35 ..
IDB06E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 6 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB06S60C , 2nd Generation thinQ SiC Schottky Diode
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors
ID82C89
