HYB5116400BJ-60 ,4M x 4-Bit Dynamic RAM
HYB5116400BJ-60 ,4M x 4-Bit Dynamic RAM
HYB5117405BJ-60 ,4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BJ-60 ,4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117800BSJ-50 ,2M x 8 Bit 2k 5 V 50 ns FPM DRAMHYB 5117800/BSJ-50/-602M · 8 - Bit Dynamic RAMHYB 3117800BSJ-50/-602k Refresh(Fast Page Mode)Advanc ..
HYB5117800BSJ-60 ,2M x 8 Bit 2k 5 V 60 ns FPM DRAMHYB 5117800/BSJ-50/-602M · 8 - Bit Dynamic RAMHYB 3117800BSJ-50/-602k Refresh(Fast Page Mode)Advanc ..
ICS9UMS9610CKLFT , PC MAIN CLOCK
ICSLV810FILFT , Buffer/Clock Driver
ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
ICTE-18 ,Diode TVS Single Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 Boxapplications0.210 (5.3) • High temperature soldering guaranteed:O0.190 (4.8) 265 C/10 seconds, 0.37 ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 Box Document Number 883562 23-May-03ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386Visha ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 BoxThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol Limit UnitPeak pulse pow ..
HYB5116400BJ-60
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
SIEMENS
4M M 4-Bit Dynamic RAM
2k & 4k Refresh
(Fast Page Mode)
Advanced Information
0 to 70 °C operating temperature
. Fast Page Mode operation
. Performance:
4 194 304 words by 4-bit organization
-50 -60
tRAC RVs access time 50 60 ns
tCAC m access time 13 15 ns
tAA Access time from address 25 30 ns
tRC ReadNVrite cycle time 84 104 ns
tPC Fast page mode cycle time 35 40 ns
. Power Dissipation, Refresh & Addressing:
HYB 51164OOBJ-50l-60
HYB 51174OOBJ-50l-60
HYB 31164OOBJIBT-50l-60
HYB 3117400BJ-5OI-60
HYB 5116400 HYB 3116400 HYB 5117400 HYB 3117400
-50 -60 -50 -60 -50 -60 -50 -60
PowerSupply 5Vi 10% 3.3V:0.3V 5Vi10% 3.31/t 0.3V
Addressing 12/10 12/10 11/11 11/11
Refresh 4096 cycles / 64 ms 2048 cycles / 32 ms
Active 275 220 180 144 440 385 288 252 mW
TTL Standby 11 7.2 11 7.2 mW
CMOS Standby 5.5 3.6 5.5 3.6 mW
. Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
. All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
. Plastic Package: P-SOJ-26/24-1
300 mil
P-TSOPI l-26/24-1 300 mil
Semiconductor Group
HYB 5116(7)400BJ-50/-60
HYB 3116(7)4OOBJIBT-50l-60
4M M 4 DRAM
SIEMENS
The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions "G" & "F'' and organized
as 4 194 304 words by 4-bits. The HYB 5(3)116(7)4OOBJ/BT utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)400
to be packaged in a standard SOJ-26/24 and TSOPll-26/24 plastic package with 300 mil width.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment.
Ordering Information
Ordering Code
Package
Descriptions
2k-Refresh Versions
HYB 5117400BJ-50
Q67100-Q1086
P-SOJ-26/24-1 300 mil
5 V 50 ns FPM-DRAM
HYB 5117400BJ-60
Q67100-Q1087
P-SOJ-26/24-1 300 mil
5 V 60 ns FPM-DRAM
HYB 3117400BJ-50
on request
P-SOJ-26/24-1 300 mil
3.3 V 50 ns FPM-DRAM
HYB 3117400BJ-60
on request
P-SOJ-26/24-1 300 mil
3.3 V 60 ns FPM-DRAM
4k-Refresh Versions
HYB 5116400BJ-50
Q67100-Q1049
P-SOJ-26/24-1 300 mil
5 V 50 ns FPM-DRAM
HYB 5116400BJ-60
Q67100-Q1050
P-SOJ-26/24-1 300 mil
5 V 60 ns FPM-DRAM
HYB 3116400BJ-50 on request P-SOJ-26/24-1 300 mil 3.3 V 50 ns FPM-DRAM
HYB 3116400BJ-60 on request P-SOJ-26/24-1 300 mil 3.3 V 60 ns FPM-DRAM
HYB 3116400BT-50 on request P-TSOPll-26/24-1 300 mil 3.3 V 50 ns FPM-DRAM
HYB 3116400BT-60 on request P-TSOPll-26/24-1 300 mil 3.3 V 60 ns FPM-DRAM
Semiconductor Group 2 1998-10-01
