HYB3118165BSJ-60 ,1M x 16-Bit Dynamic RAM 1k Refresh
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ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
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HYB3118165BSJ-50-HYB3118165BSJ-60-HYB5118165BSJ-50-HYB5118165BSJ-60
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
SIEMENS
1M M 16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
Advanced Information
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
. Hyper Page Mode-EDO-operation
. Performance:
HYB 5'118'165BSJlBST-501-60
HYB 3118165BSJ/BST-5OI-60
-50 -60
tRAC RVs access time 50 60 ns
tCAC m access time 13 15 ns
tAA Access time from address 25 30 ns
tRC ReadNVrite cycle time 84 104 ns
tHPC Hyper page mode (EDO) cycle time 20 25 ns
. Power Dissipation, Refresh & Addressing:
HYB5118165 HYB3118165
-5O -60 -5O -60
PowerSupply 51/k 10 % 3.3V: 0.3V
Addressing 10/10 10/10
Refresh 1024 cycles / 16 ms
Active 715 632 468 414 mW
TTL Standby 11 7.2 mW
CMOS Standby 5.5 3.6 mW
. Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
. All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
. Plastic Package: P-SOJ-42-1 400 mil
P-TSOPll-50/44-1 400 mil
Semiconductor Group
HYB 5118165BSJ/BST-50l-60
HYB 3118165BSJIBST-50l-60
1M M 16 EDO-DRAM
SIEMENS
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be
packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.
Ordering Information
Type Ordering Code Package Descriptions
HYB 5118165BSJ-50 Q67100-Q1107 P-SOJ-42-1 400 mil 5 V 50 ns EDO-DRAM
HYB 5118165BSJ-60 Q67100-Q1108 P-SOJ-42-1 400 mil 5 V 60 ns EDO-DRAM
HYB 3118165BSJ-50 on request P-SOJ-42-1 400 mil 3.3 V 50 ns EDO-DRAM
HYB 3118165BSJ-60 on request P-SOJ-42-1 400 mil 3.3 V 60 ns EDO-DRAM
HYB 5118165BST-50 on request P-TSOPII-50/44-1 400 mil 5 V 50 ns EDO-DRAM
HYB 5118165BST-60 on request P-TSOPII-50/44-1 400 mil 5 V 60 ns EDO-DRAM
HYB 3118165BST-50 on request P-TSOPII-50/44-1 400 mil 3.3 V 50 ns EDO-DRAM
HYB 3118165BST-60 on request P-TSOPII-50/44-1 400 mil 3.3 V 60 ns EDO-DRAM
Semiconductor Group
