HYB3116400BT-60 ,4M x 4bit DRAM 3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70HYB3117400BJ/BT(L) -50/-60/-70Advance ..
HYB3116405BT-60 ,3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117805BSJ-60 ,2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM2M · 8-Bit Dynamic RAM HYB 5117805/BSJ-50/-602k Refresh HYB 3117805/BSJ-50/-60(Hyper Page Mode-EDO) ..
HYB3118165BSJ-50 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB3118165BSJ-60 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB314400BJ-60 ,1M x 4 Bit FPM DRAM 3.3 V 60 ns1M · 4-Bit Dynamic RAM HYB 314400BJ-50/-60Advanced Information• 1 048 576 words by 4-bit organizat ..
ICS9LPRS511EGLF , Low Power Programmable Timing Control Hub™ for P4™ processor
ICS9LPRS511EGLF , Low Power Programmable Timing Control Hub™ for P4™ processor
ICS9UMS9610CKLFT , PC MAIN CLOCK
ICSLV810FILFT , Buffer/Clock Driver
ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
ICTE-18 ,Diode TVS Single Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 Boxapplications0.210 (5.3) • High temperature soldering guaranteed:O0.190 (4.8) 265 C/10 seconds, 0.37 ..
HYB3116400BT-60
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
SIEMENS
3.3V 4M x 4-Bit Dynamic RAM HYB31164OOBJIBT(L) -50I-60I-70
HYB31174OOBJIBT(L) -50/-60I-70
Advanced Information
. 4 194 304 words by 4-bit organization
0 to 70 'C operating temperature
. Performance:
-50 -60 -70
tRAC Rg-is access time 50 60 70 ns
tCAC m access time 13 15 20 ns
tAA Access time from address 25 30 35 ns
tRC ReadNVrite cycle time 90 110 130 ns
bc Fast page mode cycle time 35 40 45 ns
. Single + 3.3 V (s 0.3V) supply
. Low power dissipation
max. 396 active mW (HYB3117400BJ/BT-50)
max. 363 active mW (HYB3117400BJ/BT-60)
max. 330 active mW (HYB3117400BJ/BT-70)
max. 360 active mW (HYB3116400BJ/BT-50)
max. 324 active mW (HYB3116400BJ/BT-60)
max. 288 active mW (HYB3116400BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 ww standby for L-version
. Output unlatched at cycle end allows two-dimensional chip selection
. Read, write, read-modify-write, cis-before-R/is refresh, R-ATS-only refresh, hidden refresh,
Self Refresh and test mode
. Fast page mode capability
. All inputs, outputs and clocks fully TTL-compatible
. 2048 refresh cycles / 32 ms for HYB3117400
4096 refresh cycles / 64 ms for HYB3116400
. Plastic Package: P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group 1 1.96
HYB 3116(7)4OOBJIBT(L) -50l-60l-70
SIEMENS
3.3V 4Mx4-DRAM
The HYB 3116(7)4OOBJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The
HYB 3116(7)4OOBJ/BT utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(7)4OOBJ/BT to be packaged in a standard
SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 3.3 V (ur 0.3 V) power supply, direct
interfacing with high-performance logic device families.The HYB31164OOBTL parts have a very low
power ,,sleep mode" supported by Self Refresh.
Ordering Information
Ordering Code
Package
Descriptions
HYB 31174OOBJ-50
P-SOJQ6/24-1 300 mil
DRAM (access time 50 ns)
HYB 3117400BJ-60
P-SOJ-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3117400BJ-70
P-SOJ-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3117400BT-50
P-TSOPll-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3117400BT-60
P-TSOPll-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3117400BT-70
P-TSOPll-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BJ-50
P-SOJ-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3116400BJ-60
P-SOJ-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3116400BJ-70
P-SOJ-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BT-50
P-TSOPll-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3116400BT-60
P-TSOPll-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3116400BT-70
P-TSOPll-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BTL-50
P-TSOPll-26/24-1 300 mil
LP-DRAM (access time 50 ns)
LP-DRAM (access time 60 ns)
LP-DRAM (access time 70 ns)
HYB 3116400BTL-60
HYB 3116400BTL-70
P-TSOPll-26/24-1 300 mil
P-TSOPll-26/24-1 300 mil
Semiconductor Group 2
