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HUFA76609D3STFSCN/a33250avai10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET


HUFA76609D3ST ,10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFeaturesJEDEC TO-251AA JEDEC TO-252AA• Ultra Low On-ResistanceDRAIN DRAIN-r = 0.160Ω, V = 10VSOURCE ..
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HUFA76609D3ST
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUFA76609D3, HUFA76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
-rDS(ON) = 0.160Ω, VGS = 10V DS(ON) = 0.165Ω, VGS = 5V Simulation Models Temperature Compensated PSPICE® and SABER™
Electrical Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Switching Time vs R GS Curves
Ordering Information
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at:
JEDEC TO-251AA JEDEC TO-252AA
HUFA76609D3
DRAIN
(FLANGE)SOURCE

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76609D3ST.
HUFA76609D3, HUFA76609D3S UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±16 V
Drain Current
Continuous (TC = 25o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC = 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC = 100o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC = 100o C, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.327oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
NOTE: TJ = 25o C to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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