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HUFA76504DK8T
2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUFA76504DK8
2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
Packaging
Symbol
Features Ultra Low On-Resistancer DS(ON) = 0.200W, VGS = 10V rDS(ON) = 0.222W, VGS = 5V Simulation Models Temperature Compensated PSPICE™ and SABER
Electrical Models Spice and SABER Thermal Impedance Models Internal RG = 50W Peak Current vs Pulse Width Curve UIS Rating Curve Transient Thermal Impedance Curve vs Board Mounting
Area
Ordering Information
Absolute Maximum Ratings TA = 25o C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
JEDEC MS-012AA
BRANDING DASH234
DRAIN 1 (8)SOURCE1 (1)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)SOURCE2 (3)
GATE2 (4)
GATE1 (2)NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76504DK8T.
HUFA76504DK8 UNITSDrain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 80 V
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 80 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current
Continuous (TA= 25o C, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 25o C, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 100o C, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TA= 100o C, VGS = 4.5V) (Figure 2) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mW/oC
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CoC
NOTES:
1.TJ = 25o C to 125oC.50o C/W measured using FR-4 board with 0.76 in2 (490.3 mm2 ) copper pad at 1 second. 228o C/W measured using FR-4 board with 0.006 in2 (3.87 mm2 ) copper pad at 1000 seconds.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.
[ /Title (HUF7
6400S
K8)/Sub-
ject
(60V, 0.072
Ohm,
4A, N-Chan-
nel,
Logic Level
UltraFE
Power
MOS-
FET) /Author
/Key-words
(Harris
Semi-conduc-
tor, N-
Chan-nel,
Logic
Level UltraFE
Power MOS-
