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Partno	Mfg	Dc	Qty	Available	Descript
HUFA76429D3S	FAIRC	N/a	2500	avai	20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETs

HUFA76429D3S ,20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETs ..
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ICL7109CPL. ,12-Bit/ Microprocessor- Compatible A/D ConverterElectrical Specifications V+ = +5V, V- = -5V, GND = 0V, T = 25 C, f = 3.58MHz, A CLKUnless Otherwis ..
ICL7109CPL.. ,12-Bit/ Microprocessor- Compatible A/D ConverterElectrical Specifications V+ = +5V, V- = -5V, GND = 0V, T = 25 C, f = 3.58MHz, A CLKUnless Otherwis ..
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HUFA76429D3S
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETs
HUFA76429D3, HUFA76429D3S
20A, 60V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
Symbol
Features Ultra Low On-Resistance
DS(ON)
= 0.023
Ω,
GS
10V
DS(ON)
= 0.027
Ω,
GS Simulation Models Temperature Compensated PSPICE® and SABER™
Electriecal Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
= 25
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at:
JEDEC TO-251AA JEDEC TO-252AA
DRAIN
(FLANGE)SOURCE
GATE
HUFA76429D3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76429D3S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76429D3ST.
HUFA76429D3, HUFA76429D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS V
Drain to Gate Voltage (R
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V V
Drain Current
Continuous (T
= 25
C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous (T
= 25
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous (T
= 100
C, V
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous (T
= 100
C, V
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
STG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
NOTES:T
= 25
C to 150
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.