HUFA76413DK8T ,Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Packageapplications where power efficiency is important,• UIS Capability (Single Pulse and Repetitive Puls ..
HUFA76413P3 ,22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETFeaturesSOURCE • Ultra Low On-ResistanceDRAIN-r = 0.049Ω, V = 10VGATE GS DS(ON)-r = 0.056Ω, V = 5VD ..
HUFA76419D3S ,20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETsFeaturesJEDEC TO-251AA JEDEC TO-252AA• Ultra Low On-Resistance-r = 0.037Ω, V = 10VGS DS(ON)DRAINDRA ..
HUFA76419D3ST ,20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsFeaturesJEDEC TO-251AA JEDEC TO-252AA• Ultra Low On-Resistance-r = 0.037Ω, V = 10VGS DS(ON)DRAINDRA ..
HUFA76419P3 ,27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETsFeaturesJEDEC TO-220AB JEDEC TO-263AB• Ultra Low On-ResistanceSOURCE DRAIN-r = 0.035Ω, V = 10VGS DS ..
HUFA76423S3S ,33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETsFeatures• Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) -r = 0.030Ω, V = 10VGS DS(ON)GATE-r = 0 ..
ICL7107CPLZ , 3 1/2 Digit, LCD/LED Display, A/D Converters
ICL7107CQH ,3 Digit A/D Converterelectrical characteristics above are a reproduction of a portion of /ntersi/'s copyrighted (1983/19 ..
ICL7107CQH+D ,3 1/2 Digit A/D ConvertersApplications
. Monolithic CMOS design
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ICL7107RCPL ,3 1/2 digit LCD/LED display A/D converterFeatures Description• Guaranteed Zero Reading for 0V Input on All ScalesThe Intersil ICL7106 and IC ..
ICL7107SCPL ,31/2 Digit/ LCD/LED Display/ A/D ConvertersICL7106, ICL7107,ICL7106S, ICL7107S13 / Digit,2January 1998LCD/LED Display, A/D Converters
ICL7109CPL ,12-Bit/ Microprocessor- Compatible A/D ConverterFeatures like true differential input• Operates At Up to 30 Conversions/soand reference, drift of l ..
HUFA76413DK8T
Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package
HUFA76413DK8T January 2003 HUFA76413DK8T ® N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured us- Applications ® ing the innovative UltraFET process. This advanced pro- • Motor and Load Control cess technology achieves the lowest possible on- • Powertrain Management resistance per silicon area, resulting in outstanding perfor- mance. This device is capable of withstanding high energy Features in the avalanche mode and the diode exhibits very low re- verse recovery time and stored charge. It was designed for • 150°C Maximum Junction Temperature use in applications where power efficiency is important, • UIS Capability (Single Pulse and Repetitive Pulse) such as switching regulators, switching convertors, motor • Ultra-Low On-Resistance r = 0.049Ω, V = 10V DS(ON) GS drivers, relay drivers, low-voltage bus switches, and power • Ultra-Low On-Resistance r = 0.056Ω, V = 5V DS(ON) GS management in portable and battery-operated products. D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±16 V GS Drain Current o 5.1 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 25 C, V = 5V) 4.8 A D C GS o o Continuous (T = 125 C, V = 5V, R = 228 C/W) 1 A C GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 260 mJ AS Power dissipation 2.5 W P D o o Derate above 25C0.02W/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Ambient SO-8 (Note 2) 50 C/W θJA o R Thermal Resistance Junction to Ambient SO-8 (Note 3) 191 C/W θJA o R Thermal Resistance Junction to Ambient SO-8 (Note 4) 228 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 Rev. B
