HUFA75429D3ST ,N-Channel UltraFET R MOSFETs 60V, 20A, 25m Ohmsapplications where Ultra-Low On-Resistance r = 0.025Ω, V = 10VDS(ON) GSpower efficiency is importa ..
HUFA75617D3S ,16A, 100V, 0.090 Ohm, N-Channel, UltraFET?Power MOSFETsFeatures• Ultra Low On-ResistanceSOURCEDRAINDRAIN-r = 0.090Ω, V = 10VDS(ON) GS GATE (FLANGE) Simul ..
HUFA75623S3S ,22A, 100V, 0.064 Ohm, N-Channel, UltraFET?Power MOSFETsFeaturesSOURCEDRAIN• Ultra Low On-ResistanceDRAIN (FLANGE)GATE-r = 0.064Ω, V = 10VGS DS(ON)GATE S ..
HUFA75823D3S ,14A, 150V, 0.150 Ohm, N-Channel, UltraFET?Power MOSFETHUFA75823D3, HUFA75823D3SData Sheet December 200114A, 150V, 0.150 Ohm, N-Channel, UltraFET® Power M ..
HUFA75823D3S ,14A, 150V, 0.150 Ohm, N-Channel, UltraFET?Power MOSFETFeaturesDRAIN (FLANGE) • Ultra Low On-ResistanceSOURCEDRAIN-r = 0.150Ω, V = 10VGATE GS DS(ON)GATE ..
HUFA76407D3S ,11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET?Power MOSFETs ..
ICL7107CPLZ , 3 1/2 Digit, LCD/LED Display, A/D Converters
ICL7107CPLZ , 3 1/2 Digit, LCD/LED Display, A/D Converters
ICL7107CQH ,3 Digit A/D Converterelectrical characteristics above are a reproduction of a portion of /ntersi/'s copyrighted (1983/19 ..
ICL7107CQH+D ,3 1/2 Digit A/D ConvertersApplications
. Monolithic CMOS design
_orderirtg Informa tion
volve the measurement and di ..
ICL7107RCPL ,3 1/2 digit LCD/LED display A/D converterFeatures Description• Guaranteed Zero Reading for 0V Input on All ScalesThe Intersil ICL7106 and IC ..
ICL7107SCPL ,31/2 Digit/ LCD/LED Display/ A/D ConvertersICL7106, ICL7107,ICL7106S, ICL7107S13 / Digit,2January 1998LCD/LED Display, A/D Converters
HUFA75429D3ST
N-Channel UltraFET R MOSFETs 60V, 20A, 25m Ohms
HUFA75429D3S March 2002 HUFA75429D3S ® N-Channel UltraFET MOSFETs 60V, 20A, 25mΩ General Description Applications These N-Channel power MOSFETs are manufactured us-Motor & Load Control ® ing the innovative UltraFET process. This advanced pro-Powertrain Management cess technology achieves very low on-resistance per silicon Features area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode 175°C Maximum Junction Temperature and the diode exhibits very low reverse recovery time and UIS Capability (Single Pulse and Repetitive Pulse) stored charge. It was designed for use in applications where Ultra-Low On-Resistance r = 0.025Ω, V = 10V DS(ON) GS power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-volt- age bus switches. DRAIN (FLANGE) D GATE G SOURCE S TO-252 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 20 A Continuous (T = 25 C, V = 10V) C GS I D o o Continuous (T = 125 C, V = 10V, R = 52 C/W) 4 A C GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 312 mJ AS Power dissipation 125 W P D o o Derate above 25C0.83W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 1.2 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 Rev. A
