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HUFA75344S3 ,75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETsFeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured us ..
HUFA75429D3ST ,N-Channel UltraFET R MOSFETs 60V, 20A, 25m Ohmsapplications where Ultra-Low On-Resistance r = 0.025Ω, V = 10VDS(ON) GSpower efficiency is importa ..
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ICL7107CPLZ , 3 1/2 Digit, LCD/LED Display, A/D Converters
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. Monolithic CMOS design
_orderirtg Informa tion
volve the measurement and di ..
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HUFA75344S3
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75344G3, HUFA75344P3, HUFA75344S3S,
HUFA75344S3
75A, 55V , 0.008 Ohm, N-Channel UltraFET
Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Features 75A, 55V Simulation Models Temperature Compensated PSPICE® and SABER™
Models Thermal Impedance PSPICE and SABER Models
Available on the web at: Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST.
SOURCE
GATE
DRAIN
(TAB)
TO-220AB
DRAIN
DRAIN
SOURCE
(FLANGE)
DRAIN
(FLANGE)SOURCE
GATE
TO-262AATO-263AB
GATE
SOURCE
DRAIN
