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. Monolithic CMOS design
_orderirtg Informa tion
volve the measurement and di ..
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HUF76629D3S
20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET?Power MOSFET
HUF76629D3, HUF76629D3S
20A, 100V, 0.054 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Features Ultra Low On-Resistance
-rDS(ON) = 0.052Ω, VGS = 10V DS(ON) = 0.054Ω, VGS = 5V Simulation Models Temperature Compensated PSPICE® and SABER™
Electriecal Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Switching Time vs R GS Curves
Ordering Information
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
JEDEC TO-251AA JEDEC TO-252AA
DRAIN
(FLANGE)SOURCE
GATE
HUF76629D3NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76629D3ST.
HUF76629D3, HUF76629D3S UNITSDrain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current
Continuous (TC= 25o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 100o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 100o C, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.74oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
NOTES: TJ = 25o C to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.
