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HUF76137S3ST
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76137P3, HUF76137S3S
75A, 30V , 0.009 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76137.
Features Logic Level Gate Drive 75A, 30V Ultra Low On-Resistance, r DS(ON) = 0.009Ω Temperature Compensating PSPICE™ Model Temperature Compensating SABER™ Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76137S3ST.
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
