HUF76121P3 ,47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsFeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30 ..
HUF76121S3ST , 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121S3ST , 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121SK8 ,8A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETFeaturesLevel UltraFET Power MOSFET• Logic Level Gate DriveThis N-Channel power MOSFET is• 8A, 30Vm ..
HUF76129D3 ,20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsapplications where power Peak Current vs Pulse Width Curveefficiency is important, such as switch ..
HUF76129D3S ,20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsapplications where power Peak Current vs Pulse Width Curveefficiency is important, such as switch ..
ICL3244CB ,1Microamp, +3V to +5.5V, 250kbps, RS-232 Transceiver with Enhanced Automatic Powerdownfeatures of each device comprising theV- 3 26 VICL3244 3V family. CCR1 4 25 GNDINOrdering Informati ..
ICL3244CB ,1Microamp, +3V to +5.5V, 250kbps, RS-232 Transceiver with Enhanced Automatic Powerdownapplications are PDAs, Palmtops, and notebook and laptopcomputers where the low operational, and ev ..
ICL3244CB ,1Microamp, +3V to +5.5V, 250kbps, RS-232 Transceiver with Enhanced Automatic PowerdownApplicationscompatible with 3.3V only systems, mixed 3.3V and 5.0V• Any System Requiring RS-232 Com ..
ICL3244ECA-T , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown
ICL3244ECA-T , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown
ICL3244ECAZ , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown
HUF76121P3
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121P3, HUF76121S3S
47A, 30V , 0.021 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76121.
Features Logic Level Gate Drive 47A, 30V Ultra Low On-Resistance, r DS(ON) = 0.021Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER© Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76121S3ST.
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