HUF75925P3 ,11A, 200V, 0.275 Ohm, N-Channel, UltraFET?Power MOSFETsFeaturesJEDEC TO-220AB JEDEC TO-252AA• Ultra Low On-Resistance-r = 0.275Ω, V = 10VSOURCE DS(ON) GS ..
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HUF76105DK8 ,5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETapplications where power Peak Current vs Pulse Width Curveefficiency is important, such as switch ..
HUF76105DK8 ,5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETElectrical Specifications T = 25 C, Unless Otherwise Specified A PARAMETER SYMBOL TEST CONDITIONS M ..
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ICL3243CA ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverapplications are PDAs, Palmtops, and notebook and laptop MAX221computers where the low operational, ..
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ICL3243CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of each device comprising the - Battery Powered, Hand-Held, and Portable EquipmentICL32XX ..
ICL3243CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverapplications are PDAs, Palmtops, and notebook and laptop MAX221computers where the low operational, ..
HUF75925P3
11A, 200V, 0.275 Ohm, N-Channel, UltraFET?Power MOSFETs
HUF75925P3, HUF75925D3ST
11A, 200V, 0.275 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Features Ultra Low On-Resistance DS(ON) = 0.275Ω, VGS = 10V Simulation Models Temperature Compensated PSPICE® and SABER™
Electrical Models Spice and SABER Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve
JEDEC TO-220AB JEDEC TO-252AA
SOURCE
GATE
HUF75925P3
Ordering InformationNOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75925P3,
HUF75925D3ST UNITSDrain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 200 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
NOTE: TJ = 25o C to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.