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HUF75645P3FAIRCHILN/a200avai75A, 100V, 0.014 Ohm, N-Channel, UltraFET?Power MOSFETs


HUF75645P3 ,75A, 100V, 0.014 Ohm, N-Channel, UltraFET?Power MOSFETsFeaturesSOURCE DRAINDRAIN • Ultra Low On-Resistance (FLANGE)GATE-r = 0.014Ω, V = 10VDS(ON) GS GATE ..
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HUF75842P3 ,43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFETFeaturesSOURCEDRAIN• Ultra Low On-ResistanceGATE-r = 0.071Ω, V = 10VGS DS(ON) Simulation Models- T ..
HUF75842S3S ,43A/ 150V/ 0.042 Ohm/ N-Channel/ UltraFET Power MOSFET
HUF75852G3 ,75A/ 150V/ 0.016 Ohm/ N-Channel/ UltraFET Power MOSFETHUF76013P3, HUF76013D3STMData Sheet April 2000 File Number 484920A, 20V, 0.022 Ohm, N-Channel, Logi ..
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HUF75645P3
75A, 100V, 0.014 Ohm, N-Channel, UltraFET?Power MOSFETs
HUF75645P3, HUF75645S3S
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Features
Ultra Low On-Resistance DS(ON) = 0.014Ω, VGS = 10V Simulation Models Temperature Compensated PSPICE® and SABER™
Electrical Models Spice and Saber Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
JEDEC TO-220AB JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
GATE
HUF75645P3

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75645S3ST.
HUF75645P3, HUF75645S3S UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 100o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.07oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
NOTES: TJ = 25o C to 150oC.
CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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