HUF75639S3 ,56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFETapplications where power efficiency is important, such as Electrical Modelsswitching regulators, sw ..
HUF75639S3S ,56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75639S3S ,56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETsFeaturesUltraFET Power MOSFETs• 56A, 100VThese N-Channel power MOSFETs• Simulation Modelsare manufa ..
HUF-75639S3S ,56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75639S3ST ,56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75639S3ST ,56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETsElectrical Specifications T = 25 C, Unless Otherwise Specified CPARAMETER SYMBOL TEST CONDITIONS MI ..
ICL3241CA ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3241CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverApplicationsby this data sheet, while Application Note AN9863 • Any System Requiring RS-232 Communi ..
ICL3241CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3241CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverICL3221, ICL3222, ICL3223, ICL3232,®ICL3241, ICL3243Data Sheet November 2003 FN4805.11One Microamp ..
ICL3241CB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of each device comprising the - Battery Powered, Hand-Held, and Portable EquipmentICL32XX ..
ICL3241CV ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverapplications are PDAs, Palmtops, and notebook and laptop MAX221computers where the low operational, ..
HUF75639S3
56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
HUF75639S3R4851
56A, 115V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETThis N-Channel power MOSFETs is manufactured using the
innovative UltraFET® process. This advanced process
technology achieves the lowest possible on-resistance per
silicon area, resulting in outstanding performance. This
device is capable of withstanding high energy in the
avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching converters, motor drivers,
relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Formerly developmental type TA75639.‘
Symbol
Features 56A, 115V Simulation Models Temperature Compensated PSPICE® and SABER™
Electrical Models Spice and Saber Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-262AA
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
Ordering InformationNOTE: When ordering, use the entire part number.
SOURCE
GATE
Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified
HUF75639S3R4851 UNITSDrain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 115 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 115 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.35oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: TJ = 25o C to 150oC.
