HN9C01FE ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmO Torn dnvinng 2m hm'lf. in tn the saorwsr-thit, 2nd nytrnmn gunnr-v --- vv ..
HN9C01FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS Q2 (Ta =25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcu ..
HO1045 , 915.0 MHz SAW Oscillator
HOS-050 ,Fast Settling Video Operational AmplifierFEATURES
80ns Settling to 0.1%; 200ns lo 0.01%
100MHz Gain Bandwidth Product
55MHZ 3dB Bandwid ..
HOS-050C ,Fast Settling Video Operational AmplifierGENERAL DESCRIPTION
Thc Hos-oso, Hosmm, and HOSVOSOLZ p amp» am: very
lugh speed widchund opcuu ..
HP190 , HP 190 POLYPROPYLENE ENCLOSURE 325-990
HY57V641620HGT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220DT-7 , 4Banks x 512K x 32bits Synchronous DRAM
HN9C01FE
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA HN9CO1FE
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
HN9C01llFE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Two devices are built in to the super-thits and extreme super m
mini (6pins) package : ES6 ti'
MOUNTED DEVICES (i',i. E
Q1 Q2 m
Three-pins (SSM) mold products are 2SC5 09 6 2805086 (ara'.- L'
corresponded :3 I ' l g
'f) l -
o 1.6:005
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL Q1 Q2 UNIT l. COLLECTOR 1 4. BASE 2
Collector-Base Voltage VCBO 20 V g. 23:52:ch 2 , gngfR 2
Coueetor-Emitter Voltage VCEO 8 12 V
Emitter-Base Voltage VEBO 1.5 3 V JEDEC -
Collector Current 10 15 80 mA EIAJ -
Base Current LB 7 40 mA TOSHIB A 2-2N1 C
. . ' C . .
Collector Power Dissipation (Note 1) 100 mW Weight . 0.003g
Junction Temperature Tj 125 "C
Storage Temperature C)
(Note 1) : Total power dissipation of Q1 and Q2.
MARKING PIN ASSIGNMENT (TOP VIEW)
4 Type Name B1 E2 B2
7/ Cl Cl H
0 Q Q2
Ll Ll Ll Ll Ll Ll
1 2 3 Cl E1 C2
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-09-11 1/2
TOSHIBA
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
HN9CO1FE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 - - 1 pzA
Emitter Cut-off Current IEBO VEB = 1 V, 10 = 0 - - 1 PA
DC Current Gain hFE VCE = 6V, IC = 7 mA 50 - 160 -
Transition Frequency fT VCE = 6V, IC = 7 mA 7 10 - GHz
. . VCE=6V,IC=7mA,
Insertion Gain lS21d (2) f = 2000 MHz 4.5 7 dB
. . VCE=6V,I0=3mA,
Noise Figure NF (2) f = 2000 MHz - 1 8 3 dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = 1 V, 1C = 0 - - 1 PA
DC Current Gain hFE VCE = 10 V, 10 = 20 mA 80 - 240 -
Transition Frequency fT VCE = 10 V, 10 = 20 mA 5 7 - GHz
. . VCE = 10 V, 10 = 20 mA,
Insertion Gain lS21el (2) f = 1000 MHz 8 11 dB
. . VCE = 10V, IC = 5mA,
Noise Figure NF (2) f = 1000 MHz - 1 1 2 dB
2000-09-11 2/2
:
www.loq.com
.
