HN7G02FU ,Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverte ..
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HN9C01FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS Q2 (Ta =25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcu ..
HO1045 , 915.0 MHz SAW Oscillator
HOS-050 ,Fast Settling Video Operational AmplifierFEATURES
80ns Settling to 0.1%; 200ns lo 0.01%
100MHz Gain Bandwidth Product
55MHZ 3dB Bandwid ..
HOS-050C ,Fast Settling Video Operational AmplifierGENERAL DESCRIPTION
Thc Hos-oso, Hosmm, and HOSVOSOLZ p amp» am: very
lugh speed widchund opcuu ..
HY57V641620HGLT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HN7G02FU
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Maximum Ratings (Ta ��� � 25°C)
Q2 (MOS-FET) Maximum Ratings (Ta ��� � 25°C)
Q1, Q2 Common Ratings (Ta ��� � 25°C)
Note: Total rating
Marking
Equivalent Circuit (top view) Unit: mm
Weight: g (typ.) 5 4
12 3
